发明授权
- 专利标题: Method of manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US10885785申请日: 2004-07-08
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公开(公告)号: US07332373B2公开(公告)日: 2008-02-19
- 发明人: Shigeru Yamada
- 申请人: Shigeru Yamada
- 申请人地址: JP Tokyo
- 专利权人: Oki Electric Industry Co., Ltd
- 当前专利权人: Oki Electric Industry Co., Ltd
- 当前专利权人地址: JP Tokyo
- 代理机构: Rabin & Berdo, P.C.
- 优先权: JP2004-044787 20040220
- 主分类号: H01L21/78
- IPC分类号: H01L21/78
摘要:
The present invention provides a method of manufacturing semiconductor device. The method includes providing a semiconductor wafer having a main surface; defining a chip forming region which includes chip regions defined by scribe lines, and a peripheral region which surrounds the chip forming region, on the main surface; forming circuit elements and electrode pads connected to the circuit elements on the chip areas; forming an insulating film, which exposes respective portions of the electrode pads, on the main surface; forming protruded electrodes on the insulating film provided in the chip areas so that the protruded electrodes are arranged at predetermined intervals in the chip area; forming an encapsulating material, which exposes top faces of the protruded electrodes, on the insulating film; and cutting the semiconductor wafer along the scribe lines.
公开/授权文献
- US20050186708A1 Method of manufacturing semiconductor device 公开/授权日:2005-08-25