发明授权
- 专利标题： Silicide structure for ultra-shallow junction for MOS devices
- 专利标题（中）： 用于MOS器件的超浅结的硅化物结构
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申请号： US11072038申请日： 2005-03-04
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公开(公告)号： US07332435B2公开(公告)日： 2008-02-19
- 发明人: Chien-Hsueh Shih , Shih-Wei Chou , Hung-Wen Su , Minghsing Tsai
- 申请人： Chien-Hsueh Shih , Shih-Wei Chou , Hung-Wen Su , Minghsing Tsai
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method of forming a semiconductor device comprising: forming a gate dielectric layer over a channel region; forming a gate electrode on the gate dielectric layer; forming source/drain regions substantially aligned with respective edges of the gate electrode with the channel region therebetween; forming a thin metal layer on the source/drain regions; forming a metal alloy layer on the thin metal layer; and transforming the thin metal layer into a low resistance metal silicide.
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