发明授权
- 专利标题: Infrared sensor and infrared sensor array
- 专利标题(中): 红外传感器和红外传感器阵列
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申请号: US10580534申请日: 2005-09-15
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公开(公告)号: US07332717B2公开(公告)日: 2008-02-19
- 发明人: Takahiko Murata , Takumi Yamaguchi , Shigetaka Kasuga , Shinji Yoshida , Yoshito Ikeda
- 申请人: Takahiko Murata , Takumi Yamaguchi , Shigetaka Kasuga , Shinji Yoshida , Yoshito Ikeda
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2004-303262 20041018
- 国际申请: PCT/JP2005/017070 WO 20050915
- 国际公布: WO2006/043384 WO 20060427
- 主分类号: G01J5/00
- IPC分类号: G01J5/00
摘要:
An infrared sensor includes a series capacitor element and a reference capacitor element each exhibiting a predetermined capacitance value; an infrared-detecting capacitor element whose capacitance value varies depending on an intensity of infrared light incident on the element; and an output node being a node at which a first terminal of the series capacitor element, a first terminal of the reference capacitor element and a first terminal of the infrared-detecting capacitor element are connected to one another. The intensity of infrared light is output as a potential difference between the reference potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the reference capacitor element and the detection potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the infrared-detecting capacitor element.
公开/授权文献
- US20070125949A1 Infrared sensor and infrared sensor array 公开/授权日:2007-06-07