Infrared sensor and infrared sensor array
    1.
    发明授权
    Infrared sensor and infrared sensor array 有权
    红外传感器和红外传感器阵列

    公开(公告)号:US07332717B2

    公开(公告)日:2008-02-19

    申请号:US10580534

    申请日:2005-09-15

    IPC分类号: G01J5/00

    CPC分类号: G01J5/24 G01J1/46 H04N5/33

    摘要: An infrared sensor includes a series capacitor element and a reference capacitor element each exhibiting a predetermined capacitance value; an infrared-detecting capacitor element whose capacitance value varies depending on an intensity of infrared light incident on the element; and an output node being a node at which a first terminal of the series capacitor element, a first terminal of the reference capacitor element and a first terminal of the infrared-detecting capacitor element are connected to one another. The intensity of infrared light is output as a potential difference between the reference potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the reference capacitor element and the detection potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the infrared-detecting capacitor element.

    摘要翻译: 红外线传感器包括串联电容器元件和参考电容器元件,每个都具有预定的电容值; 其电容值根据入射到元件上的红外光的强度而变化的红外线检测电容器元件; 并且输出节点是串联电容器元件的第一端子,参考电容器元件的第一端子和红外线检测电容器元件的第一端子彼此连接的节点。 红外光的强度通过在串联电容器元件和参考电容器元件之间施加预定电压而被引入到电位的参考电位之间的电位差和通过施加预定的 串联电容器元件和红外线检测电容器元件之间的电压。

    Infrared sensor and infrared sensor array
    2.
    发明申请
    Infrared sensor and infrared sensor array 有权
    红外传感器和红外传感器阵列

    公开(公告)号:US20070125949A1

    公开(公告)日:2007-06-07

    申请号:US10580534

    申请日:2005-09-15

    IPC分类号: G01J5/00

    CPC分类号: G01J5/24 G01J1/46 H04N5/33

    摘要: An infrared sensor includes a series capacitor element and a reference capacitor element each exhibiting a predetermined capacitance value; an infrared-detecting capacitor element whose capacitance value varies depending on an intensity of infrared light incident on the element; and an output node being a node at which a first terminal of the series capacitor element, a first terminal of the reference capacitor element and a first terminal of the infrared-detecting capacitor element are connected to one another. A potential of the output node is brought to a reference potential by applying a predetermined voltage between a second terminal of the series capacitor element and a second terminal of the reference capacitor element; a potential of the output node is brought to a detection potential by applying the predetermined voltage between the second terminal of the series capacitor element and a second terminal of the infrared-detecting capacitor element; and the intensity of infrared light is output as a potential difference between the reference potential and the detection potential.

    摘要翻译: 红外线传感器包括串联电容器元件和参考电容器元件,每个都具有预定的电容值; 其电容值根据入射到元件上的红外光的强度而变化的红外线检测电容器元件; 并且输出节点是串联电容器元件的第一端子,参考电容器元件的第一端子和红外线检测电容器元件的第一端子彼此连接的节点。 通过在串联电容器元件的第二端子和参考电容器元件的第二端子之间施加预定电压使输出节点的电位达到参考电位; 通过在串联电容器元件的第二端子和红外线检测电容器元件的第二端子之间施加预定电压使输出节点的电位达到检测电位; 并且将红外光的强度作为参考电位和检测电位之间的电位差输出。

    Summing signals in pixel units of solid-state imager
    3.
    发明授权
    Summing signals in pixel units of solid-state imager 有权
    以固态成像仪的像素单位求和信号

    公开(公告)号:US08018510B2

    公开(公告)日:2011-09-13

    申请号:US11569603

    申请日:2005-02-25

    IPC分类号: H04N5/335

    CPC分类号: H04N5/374 H04N5/347

    摘要: A solid-state imaging device is provided in which sensitivity is prevented from lowering even when signals of pixels are mixed. The solid-state imaging device includes a plurality of pixel units each of which has a photoelectric conversion element, and is capable of summing signals corresponding to respective outputs of the photoelectric conversion elements of the pixel units. The device includes: a plurality of capacitors, each of which individually accumulates electric charges corresponding to a signal outputted from the associated photoelectric conversion element; and a plurality of MOS transistors which are alternately connected with the associated capacitor. By disconnecting the MOS transistor, the electric charges of the signal outputted from each of the photoelectric conversion elements are accumulated in each associated capacitor, and by conducting the MOS transistors to sum the signals of the pixel units, the capacitors are connected in series.

    摘要翻译: 提供一种固态成像装置,即使在像素的信号混合的情况下也可以防止其降低灵敏度。 固态成像装置包括多个像素单元,每个像素单元具有光电转换元件,并且能够对与像素单元的光电转换元件的各个输出相对应的信号求和。 该装置包括:多个电容器,每个电容器分别累积与从相关联的光电转换元件输出的信号相对应的电荷; 以及与相关联的电容器交替连接的多个MOS晶体管。 通过断开MOS晶体管,从每个相关联的电容器中累积从每个光电转换元件输出的信号的电荷,并且通过使MOS晶体管将像素单元的信号相加,电容器串联连接。

    Solid-state imaging device
    4.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号:US07667171B2

    公开(公告)日:2010-02-23

    申请号:US11571461

    申请日:2005-07-04

    IPC分类号: H01L27/00

    摘要: In the case where a subject is captured with a high-luminance light, such as sunlight, for a background, a phenomenon that a portion of the high-luminance subject is detected as a no-signal level is prevented. The solid-state imaging device includes: a photoelectric transducer PD which converts incident light to charges; a voltage level detection circuit 50 in which pixel units 10an1 and 10bn1, each having a voltage conversion amplifying transistor Q13a which outputs a voltage by converting the charges accumulated in the photoelectric transducer PD, are arranged one-dimensionally or two-dimensionally, and which detects a pixel output voltage outputted from each of the pixel units to the common column signal line Ln; and a column signal processing circuit 80 which receives a logic output voltage of the voltage level detection circuit 50 and the pixel output voltage and which outputs a voltage to a horizontal output circuit 90. The column signal processing circuit 80 outputs either a voltage identical to the pixel output voltage or a fixed voltage, depending on the logic output voltage.

    摘要翻译: 在用诸如阳光的高亮度光拍摄被摄体背景的情况下,防止将高亮度被摄体的一部分检测为无信号电平的现象。 固态成像装置包括:将入射光转换成电荷的光电转换器PD; 电压电平检测电路50,其中具有通过转换积累在光电变换器PD中的电荷而输出电压的电压转换放大晶体管Q13a的像素单元10an1和10bn1被一维或二维地排列, 从每个像素单元输出到公共列信号线Ln的像素输出电压; 以及列信号处理电路80,其接收电压电平检测电路50的逻辑输出电压和像素输出电压,并向水平输出电路90输出电压。列信号处理电路80输出与 像素输出电压或固定电压,取决于逻辑输出电压。

    SOLID STATE IMAGING DEVICE
    5.
    发明申请
    SOLID STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号:US20090033780A1

    公开(公告)日:2009-02-05

    申请号:US12091138

    申请日:2006-07-11

    IPC分类号: H04N5/335

    摘要: An object of the present invention is to provide a two-dimensional solid state imaging device which can realize speeding up of signal output. The two-dimensional solid state imaging device includes: a pixel region; a first capacitance element and a second capacitance element each of which is arranged for a different column of pixels and accumulates pixel signals of the corresponding column of pixels; a first horizontal signal line and a second horizontal signal line each of which transmits the pixel signals accumulated in a corresponding capacitance element; a common signal line connected to the horizontal signal lines; a scan timing generation unit and a switch unit which control readout of the pixel signals from the capacitance element to the horizontal signal line; and an external output timing unit and a switch unit which select the horizontal signal line and control output of the pixel signals from the selected horizontal signal line to the common signal line. Here, the scan timing generation unit and the switch unit, and the external output timing unit and the switch unit control the readout and the output of the pixel signals, respectively, so that a time period required for the readout of the pixel signals from the capacitance element to the signal line is longer than a time period required for the output of the pixel signals from the signal line to the common signal line.

    摘要翻译: 本发明的目的是提供一种可实现信号输出加速的二维固态成像装置。 二维固态成像装置包括:像素区域; 第一电容元件和第二电容元件,每个元件被布置用于不同的像素列并且累积相应列的像素的像素信号; 第一水平信号线和第二水平信号线,每个信号线发送累积在对应的电容元件中的像素信号; 连接到水平信号线的公共信号线; 扫描定时生成单元和开关单元,其控制从电容元件到水平信号线的像素信号的读出; 以及外部输出定时单元和开关单元,其选择水平信号线并将所选择的水平信号线的像素信号的输出控制到公共信号线。 这里,扫描定时生成单元和开关单元以及外部输出定时单元和开关单元分别控制像素信号的读出和输出,从而从像素信号读出所需的时间周期 信号线的电容元件比从信号线到公共信号线的像素信号的输出所需的时间长。

    AD converter
    6.
    发明申请
    AD converter 有权
    AD转换器

    公开(公告)号:US20080018517A1

    公开(公告)日:2008-01-24

    申请号:US11822589

    申请日:2007-07-09

    IPC分类号: H03M1/34

    摘要: An AD converter includes an analog data storing unit, a first DA converter for converting an input digital data into a first analog reference voltage which varies within a first voltage range in a range of every possible signal voltage of the input analog data, a second DA converter for converting the input digital data into a second analog reference voltage which varies within a second voltage range in the range of every possible signal voltage of the input analog data, a first comparator for comparing the input analog data with the first reference voltage, a second comparator for comparing the input analog data with the second reference voltage and a digital data storing unit for storing a digital data corresponding to a point of time when a change of state occurs in the comparison results of each of the first and second comparators.

    摘要翻译: AD转换器包括模拟数据存储单元,第一DA转换器,用于将输入数字数据转换成在输入模拟数据的每个可能的信号电压的范围内在第一电压范围内变化的第一模拟参考电压;第二DA 转换器,用于将输入数字数据转换成在输入模拟数据的每个可能的信号电压的范围内在第二电压范围内变化的第二模拟参考电压,用于将输入的模拟数据与第一参考电压进行比较的第一比较器, 第二比较器,用于将输入模拟数据与第二参考电压进行比较;以及数字数据存储单元,用于存储对应于在第一和第二比较器中的每一个的比较结果中发生状态改变的时间点的数字数据。

    Solid state imaging device, method for driving the same, and camera
    7.
    发明申请
    Solid state imaging device, method for driving the same, and camera 有权
    固态成像装置,其驱动方法和相机

    公开(公告)号:US20070109432A1

    公开(公告)日:2007-05-17

    申请号:US11528523

    申请日:2006-09-28

    IPC分类号: H04N3/14 H04N5/335

    CPC分类号: H04N5/3741 H04N5/3742

    摘要: A solid state imaging device includes an imaging area where a plurality of first pixels and a plurality of second pixels are respectively arranged in the form of a matrix, each of the first pixels and the second pixels having a photoelectric conversion portion and outputting a signal in accordance with brightness of incident light when selected; a plurality of first memories that respectively store signals of selected first pixels out of the plurality of first pixels; and a plurality of second memories that are respectively connected in parallel to the first memories and respectively store signals of selected second pixels out of the plurality of second pixels. The signals stored in the first memories and in the second memories are successively read to a horizontal signal line.

    摘要翻译: 固态成像装置包括其中多个第一像素和多个第二像素分别以矩阵形式布置的成像区域,每个第一像素和第二像素具有光电转换部分,并且输出信号 根据入射光的亮度选择; 多个第一存储器,分别存储多个第一像素中所选择的第一像素的信号; 以及分别与第一存储器并联连接并分别存储多个第二像素中所选择的第二像素的信号的多个第二存储器。 存储在第一存储器和第二存储器中的信号被连续地读取到水平信号线。

    Solid-state image sensor and manufacturing method thereof
    8.
    发明授权
    Solid-state image sensor and manufacturing method thereof 有权
    固态图像传感器及其制造方法

    公开(公告)号:US07968888B2

    公开(公告)日:2011-06-28

    申请号:US11422708

    申请日:2006-06-07

    IPC分类号: H01L31/00

    摘要: An object of the present invention is to provide a small solid-state image sensor which realizes significant improvement in sensitivity. The solid-state image sensor of the present invention includes a semiconductor substrate in which photoelectric conversion units are formed, a light-blocking film which is formed above the semiconductor substrate and has apertures formed so as to be positioned above respective photoelectric conversion units, and a high refractive index layer formed in the apertures. Here, each aperture has a smaller aperture width than a maximum wavelength in a wavelength of light in a vacuum converted from a wavelength of the light entering the photoelectric conversion unit through the apertures, and the high refractive index is made of a high refractive index material having a refractive index which allows transmission of light having the maximum wavelength through the aperture.

    摘要翻译: 本发明的目的是提供一种实现敏感度显着提高的小型固态图像传感器。 本发明的固态图像传感器包括形成有光电转换单元的半导体衬底,形成在半导体衬底之上并具有形成为位于各个光电转换单元之上的孔的遮光膜,以及 形成在孔中的高折射率层。 这里,每个孔径在从通过孔进入光电转换单元的光的波长转换的真空中的光波长中的最大波长较小,高折射率由高折射率材料 具有折射率,其允许通过孔径传输具有最大波长的光。

    Infrared sensor and method for driving the same
    9.
    发明授权
    Infrared sensor and method for driving the same 有权
    红外线传感器及其驱动方法

    公开(公告)号:US07423271B2

    公开(公告)日:2008-09-09

    申请号:US11665603

    申请日:2006-06-09

    IPC分类号: G01J5/34 H01L27/14

    摘要: An infrared sensor includes a plurality of reference pixel units 2 arranged in a matrix pattern and series capacitor elements 14 provided in a one-to-one correspondence with the reference pixel units 2. The reference pixel units 2 each include an output line 30, a reference capacitor element 13 connected via a switching element 17 between the output line and the ground, and a plurality of infrared-detecting capacitor elements 12 connected via associated switching elements 16 between the output line 30 and the ground. Each series capacitor element 14 is connected to the associated output line 30.

    摘要翻译: 红外线传感器包括以矩阵图案排列的多个参考像素单元2和与参考像素单元2一一对应地设置的串联电容器元件14。 参考像素单元2各自包括输出线30,经由输出线和地之间的开关元件17连接的参考电容器元件13以及通过相关联的开关元件16连接在输出线和地之间的多个红外线检测电容器元件12 30号线和地面。 每个串联电容器元件14连接到相关联的输出线30。