发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US11005963申请日: 2004-12-07
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公开(公告)号: US07332815B2公开(公告)日: 2008-02-19
- 发明人: Yutaka Shionoiri , Tomoaki Atsumi , Kiyoshi Kato
- 申请人: Yutaka Shionoiri , Tomoaki Atsumi , Kiyoshi Kato
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Cook, Alex, McFarron, Manzo, Cummings & Mehler, Ltd.
- 优先权: JP2003-415169 20031212
- 主分类号: G03C1/85
- IPC分类号: G03C1/85
摘要:
The present invention has an object to provide a semiconductor device, an ID tag, in which delay of signal transmission with conductive layers is controlled. In addition, the other object is that a design method of such a semiconductor device is provided.A semiconductor device of the invention comprises a plurality of conductive layers, a plurality of first element groups each of which selects one among the conductive layers and a plurality of second element groups each of which amplifies a signal each transmitted from the conductive layers. Each of the second element groups is disposed between the first element groups. Stated another way, the first element group and the second element group are disposed alternately. The delay of the signal transmission with the plurality of conductive layers is controlled because a load by a parasitic capacitance is reduced due to the above feature.
公开/授权文献
- US20050140015A1 Semiconductor device 公开/授权日:2005-06-30
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