Provided is a magnetoresistive device capable of stably maintaining sufficient output characteristics even under a higher temperature environment while responding to a demand for a higher recording density. The magnetoresistive device comprises an MR film including a fixing layer made of IrMn, an outer pinned layer of which the magnetization direction is fixed in a +Y direction by the fixing layer, and an inner pinned layer of which the magnetization direction is fixed in a −Y direction by the fixing layer, a pair of conductive lead layers and a constant current circuit which flows a sense current in a +X direction so as to generate a current magnetic field toward a −Y direction in the inner pinned layer, and in the magnetoresistive device, a conditional expression (1) is satisfied. Thereby, the magnetization directions of the outer pinned layer and the inner pinned layer can be stabilized, so even under a high temperature environment, the magnetoresistive device can obtain stable output characteristics, and can respond to a demand for a higher recording density.