公开(公告)号：US06972933B1

公开(公告)日：2005-12-06

申请号：US09419793

申请日：1999-10-18

申请人： Takeshi Wada ,  Kenji Inage ,  Masashi Shiraishi ,  Haruyuki Morita

发明人： Takeshi Wada ,  Kenji Inage ,  Masashi Shiraishi ,  Haruyuki Morita

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： G11B5/3967

摘要： A head suspension assembly includes a magnetic head slider with at least one thin-film magnetic head element, a support member for supporting the magnetic head slider at a top end portion thereof, a drive circuit electrically connected to the at least one thin-film magnetic head element, and at least two diode elements connected toward one direction in parallel with terminals which are connected across the at least one thin-film magnetic head element. Each of the diode elements has a turn-on voltage higher than the maximum output voltage of the at least one thin-film magnetic head element.

摘要翻译： 头悬挂组件包括具有至少一个薄膜磁头元件的磁头滑动器，用于在其顶端部分处支撑磁头滑块的支撑构件，与至少一个薄膜磁性电连接的驱动电路 头元件和至少两个二极管元件连接，所述至少两个二极管元件与连接在所述至少一个薄膜磁头元件上的端子平行地朝向一个方向连接。 每个二极管元件具有高于至少一个薄膜磁头元件的最大输出电压的导通电压。

公开(公告)号：US07372282B2

公开(公告)日：2008-05-13

申请号：US11276753

申请日：2006-03-13

申请人： Nozomu Hachisuka ,  Hiroshi Kiyono ,  Takeo Kagami ,  Kenji Inage ,  Norio Takahashi

发明人： Nozomu Hachisuka ,  Hiroshi Kiyono ,  Takeo Kagami ,  Kenji Inage ,  Norio Takahashi

IPC分类号： G01R27/08 ,  H01L21/66

CPC分类号： G11B5/455 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3166 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/16 ,  G11C29/50 ,  G11C29/50008 ,  G11C29/56 ,  H01F10/3254 ,  H01F41/302

摘要： A method for testing a TMR element includes a step of measuring a plurality of resistances of the TMR element by applying a plurality of voltages with different voltage values each other to the TMR element, respectively, a step of calculating a ratio of change in resistance from the measured plurality of resistances of the TMR element, and a step of evaluating the TMR element using the calculated ratio of change in resistance.

摘要翻译： 一种用于测试TMR元件的方法包括分别通过向TMR元件施加具有不同电压值的多个电压来测量TMR元件的多个电阻的步骤，计算电阻变化率 测量的TMR元件的多个电阻，以及使用所计算的电阻变化比来评估TMR元件的步骤。

公开(公告)号：US07333303B2

公开(公告)日：2008-02-19

申请号：US11023505

申请日：2004-12-29

申请人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Kenji Inage

发明人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Kenji Inage

IPC分类号： G11B5/39

CPC分类号： G11B5/3903

摘要： Provided is a magnetoresistive device capable of stably maintaining sufficient output characteristics even under a higher temperature environment while responding to a demand for a higher recording density. The magnetoresistive device comprises an MR film including a fixing layer made of IrMn, an outer pinned layer of which the magnetization direction is fixed in a +Y direction by the fixing layer, and an inner pinned layer of which the magnetization direction is fixed in a −Y direction by the fixing layer, a pair of conductive lead layers and a constant current circuit which flows a sense current in a +X direction so as to generate a current magnetic field toward a −Y direction in the inner pinned layer, and in the magnetoresistive device, a conditional expression (1) is satisfied. Thereby, the magnetization directions of the outer pinned layer and the inner pinned layer can be stabilized, so even under a high temperature environment, the magnetoresistive device can obtain stable output characteristics, and can respond to a demand for a higher recording density.

摘要翻译： 提供了一种即使在较高温度环境下也能够稳定地保持足够的输出特性并且响应于更高记录密度的需求的磁阻器件。 磁阻器件包括MR膜，其包括由IrMn制成的固定层，通过固定层将磁化方向固定在+ Y方向上的外部钉扎层，以及将磁化方向固定在其中的内部钉扎层 -Y方向，一对导电引线层和恒流电路，其在+ X方向上流过感测电流，以便在内部被钉扎层中朝向-Y方向产生电流磁场，并且在 磁阻器件，条件式（1）被满足。 由此，外部被钉扎层和内部被钉扎层的磁化方向可以稳定，因此即使在高温环境下，磁阻器件也能够得到稳定的输出特性，能够满足更高记录密度的要求。

公开(公告)号：US06433540B1

公开(公告)日：2002-08-13

申请号：US09488559

申请日：2000-01-21

申请人： Nozomu Hachisuka ,  Kenji Inage ,  Toshiaki Maeda

发明人： Nozomu Hachisuka ,  Kenji Inage ,  Toshiaki Maeda

IPC分类号： G01R3312

CPC分类号： G11B5/3166 ,  G11B5/455 ,  G11B2005/0016

摘要： A method for testing a composite type magnetic head having a MR element and an inductive element includes a current application step of applying a current to the inductive element, with applying no external magnetic field to the magnetic head, and a measurement step of measuring output characteristics of the MR element after the current application step is finished.

摘要翻译： 一种用于测试具有MR元件和电感元件的复合型磁头的方法包括：向电感元件施加电流的电流施加步骤，不向磁头施加外部磁场;以及测量步骤，测量输出特性 在当前应用步骤完成之后的MR元件。

公开(公告)号：US06340885B1

公开(公告)日：2002-01-22

申请号：US09196442

申请日：1998-11-20

申请人： Nozomu Hachisuka ,  Toshiaki Maeda ,  Kenji Inage

发明人： Nozomu Hachisuka ,  Toshiaki Maeda ,  Kenji Inage

IPC分类号： G01R3312

CPC分类号： G11B5/3173 ,  G11B5/3166 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/455 ,  G11B2005/0008 ,  G11B2005/0013

摘要： A current which will change an initial magnetization state of a shield layer for a MR element is applied to an inductive element, and output characteristics of the MR element is measured.

摘要翻译： 将将用于MR元件的屏蔽层的初始磁化状态改变的电流施加到电感元件，并测量MR元件的输出特性。

公开(公告)号：US6163437A

公开(公告)日：2000-12-19

申请号：US44886

申请日：1998-03-20

申请人： Kenji Inage ,  Toshiaki Maeda ,  Jun Shouji ,  Koichi Terunuma ,  Masanori Sakai

发明人： Kenji Inage ,  Toshiaki Maeda ,  Jun Shouji ,  Koichi Terunuma ,  Masanori Sakai

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/40 ,  H01F10/00 ,  H01F10/08 ,  H01F10/32 ,  H01L43/08

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3166 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/40 ,  G11B2005/3996

摘要： A magnetic head with a spin valve effect MR element and a method of manufacturing the head. A plurality of spin valve effect MR elements on a substrate are formed, a plurality of pairs of lead conductors connected with the respective spin valve effect MR elements on the substrate are formed, and then a plurality of protection circuits of magnetization inversion connected between the respective pairs of lead conductors on the substrate are formed. Each of the protection circuits is constituted so as to turn on when it receives an energy with a level at which the pinned direction inversion in each of the spin valve effect MR elements occurs.

摘要翻译： 具有旋转阀效应MR元件的磁头和制造头部的方法。 在衬底上形成多个自旋阀效应MR元件，形成多个与各个自旋阀连接的引导导体，在衬底上形成MR元件，然后将多个磁化反转保护电路连接在相应的 形成基板上的导体导体对。 每个保护电路被构造成当其接收到具有在每个自旋阀效应MR元件中发生销钉方向反转的水平的能量时接通能量。

公开(公告)号：US07916434B2

公开(公告)日：2011-03-29

申请号：US11387876

申请日：2006-03-24

申请人： Shunji Saruki ,  Kenji Inage ,  Tetsuya Kuwashima ,  Hiroshi Kiyono ,  Katsumichi Tagami ,  Kazumasa Fukuda ,  Masahide Kohno

发明人： Shunji Saruki ,  Kenji Inage ,  Tetsuya Kuwashima ,  Hiroshi Kiyono ,  Katsumichi Tagami ,  Kazumasa Fukuda ,  Masahide Kohno

IPC分类号： G11B5/33

CPC分类号： G11B5/455 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3254 ,  H01F41/303 ,  H01L43/08 ,  H01L43/12

摘要： A TMR effect element with sufficiently reduced element resistance and restricted popping noise is provided, which comprises a tunnel barrier layer formed primarily of a metal oxide including many electric charge sites. The electric charge sites density n and the mobility μ of electrons trapped due to the electric charge sites satisfy a relationship expressed by: 0

摘要翻译： 提供具有充分降低的元件电阻和限制弹出噪声的TMR效应元件，其包括主要由包括许多电荷位点的金属氧化物形成的隧道势垒层。 电荷位置密度n和由于电荷位点捕获的电子的迁移率μ满足由下式表示的关系：0 <（ns1-1-ns2-1）-1·（μ0-μ）·（nμ）-1 <0.2，其中ns1和ns2是在读取信号期间元件电阻分别为最小值和最大值时隧道电子的密度，μ0是未被捕获时电子的迁移率。

公开(公告)号：US07283328B2

公开(公告)日：2007-10-16

申请号：US11113973

申请日：2005-04-26

申请人： Norikazu Ota ,  Kenji Inage ,  Taro Oike

发明人： Norikazu Ota ,  Kenji Inage ,  Taro Oike

IPC分类号： G11B21/02 ,  G11B5/56 ,  G11B5/10

CPC分类号： G11B5/3136 ,  G11B5/314 ,  G11B5/4826 ,  G11B5/6064

摘要： A thin-film magnetic head includes at least one inductive write head element and at least one read magnetic head element, capable of controlling a spacing between a magnetic recording medium and the at least one magnetic read head element by heating. A gain SG (nm/° C.) of the spacing is greater than a spacing gain threshold SGTHLD (nm/° C.) defined by the following expression: SGLIMT=A*dPTP+B A=1.4642E−02*exp(−6.6769E−05*LRDMF) B=4.9602E−01*exp(−2.0423E−03*LRDMF) where dPTP represents an amount of change in protrusion (nm) of a top end of the at least one inductive write head element and/or the at least one read magnetic head element by heating, and LRDMF represents a line recording density (kFCI) at a frequency half of the maximum recording frequency.

摘要翻译： 薄膜磁头包括至少一个感应写头元件和至少一个读磁头元件，能够通过加热来控制磁记录介质和至少一个磁读头元件之间的间隔。 间隔的增益SG（nm /℃）大于由以下表达式定义的间隔增益阈值SG （nm /℃）：<？在线公式描述 =“直线公式”end =“lead”？> SG _{LIMT = A * dPTP + B <？in-line-formula description =“In-line Formulas”end =“tail”？ > A = 1.4642E-02 * exp（-6.6769E-05 * LRD MF）B = 4.9602E-01 * exp（-2.0423E-03 * LRD MF MF ）其中dPTP表示通过加热至少一个感应写入头元件和/或至少一个读磁头元件的顶端的突起（nm）的变化量，并且LRD < 表示在最大记录频率的一半频率处的行记录密度（kFCI）。}

公开(公告)号：US07227772B2

公开(公告)日：2007-06-05

申请号：US11070237

申请日：2005-03-03

申请人： Shunji Saruki ,  Kenji Inage ,  Nozomu Hachisuka ,  Hiroshi Kiyono

发明人： Shunji Saruki ,  Kenji Inage ,  Nozomu Hachisuka ,  Hiroshi Kiyono

IPC分类号： G11B5/455

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/455 ,  G11B2005/0018

摘要： Testing a TMR element includes a step of measuring initially a resistance value of the TMR element to provide the measured resistance value as a first resistance value, a step of measuring a resistance value of the TMR element after continuously feeding a current through the TMR element for a predetermined period of time, to provide the measured resistance value as a second resistance value, and a step of evaluating the TMR element depending upon a degree of change in resistance of the TMR element. The degree of change in resistance is determined based upon the first resistance value and the second resistance value.

摘要翻译： 测试TMR元件包括首先测量TMR元件的电阻值以提供测量的电阻值作为第一电阻值的步骤，在连续馈送电流通过TMR元件之后测量TMR元件的电阻值的步骤，用于 提供测量的电阻值作为第二电阻值的预定时间段，以及根据TMR元件的电阻变化程度来评估TMR元件的步骤。 基于第一电阻值和第二电阻值来确定电阻的变化程度。

公开(公告)号：US20060216837A1

公开(公告)日：2006-09-28

申请号：US11276753

申请日：2006-03-13

申请人： Nozomu HACHISUKA ,  Hiroshi Kiyono ,  Takeo Kagami ,  Kenji Inage ,  Norio Takahashi

发明人： Nozomu HACHISUKA ,  Hiroshi Kiyono ,  Takeo Kagami ,  Kenji Inage ,  Norio Takahashi

IPC分类号： H01L21/00 ,  H01L21/66

CPC分类号： G11B5/455 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3166 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/16 ,  G11C29/50 ,  G11C29/50008 ,  G11C29/56 ,  H01F10/3254 ,  H01F41/302

摘要： A method for testing a TMR element includes a step of measuring a plurality of resistances of the TMR element by applying a plurality of voltages with different voltage values each other to the TMR element, respectively, a step of calculating a ratio of change in resistance from the measured plurality of resistances of the TMR element, and a step of evaluating the TMR element using the calculated ratio of change in resistance.

摘要翻译： 一种用于测试TMR元件的方法包括分别通过向TMR元件施加具有不同电压值的多个电压来测量TMR元件的多个电阻的步骤，计算电阻变化率 测量的TMR元件的多个电阻，以及使用所计算的电阻变化比来评估TMR元件的步骤。