发明授权
US07335464B2 Water soluble resin composition, method of pattern formation and method of inspecting resist pattern 有权
水溶性树脂组合物,图案形成方法和抗蚀剂图案检查方法

  • 专利标题: Water soluble resin composition, method of pattern formation and method of inspecting resist pattern
  • 专利标题(中): 水溶性树脂组合物,图案形成方法和抗蚀剂图案检查方法
  • 申请号: US10546334
    申请日: 2004-02-16
  • 公开(公告)号: US07335464B2
    公开(公告)日: 2008-02-26
  • 发明人: Yusuke TakanoSung-Eun Hong
  • 申请人: Yusuke TakanoSung-Eun Hong
  • 申请人地址: US NJ Somerville
  • 专利权人: AZ Electronic Materials USA Corp.
  • 当前专利权人: AZ Electronic Materials USA Corp.
  • 当前专利权人地址: US NJ Somerville
  • 代理商 Sangya Jain
  • 优先权: JP2003-045599 20030224
  • 国际申请: PCT/JP2004/001612 WO 20040216
  • 国际公布: WO2004/074941 WO 20040902
  • 主分类号: G03F7/039
  • IPC分类号: G03F7/039 G03F7/40
Water soluble resin composition, method of pattern formation and method of inspecting resist pattern
摘要:
A water-soluble resin composition of the present invention comprises at least a water-soluble resin, an acid generator capable of generating an acid by heating and a solvent containing water. The water-soluble resin composition is applied on a highly water-repellant resist pattern 3 formed by a resist such as an ArF-responsive radiation sensitive resin composition on a substrate 1 to form a coated layer 4 thereon. The resist pattern 3 and the coated layer 4 are heat-treated to form a developer-insoluble modified coated layer 5 in the vicinity of a surface of the resist pattern 3. The coated layer is developed and the resist pattern thickened by the modified layer 5 is formed. The modified layer is a layer with sufficient thickness and is able to be formed with a high dimensional controllability in a highly water-repellant resist pattern such as ArF-responsive radiation sensitive resin composition. As a result, a separation size and a hole aperture size of the resist pattern are reduced effectively to less than a limit resolution. As the modified layer 5 has a function of a protecting film for the resist pattern upon electron beam irradiation, a size measurement fluctuation of a resist pattern upon electron beam irradiation by a size measuring SEM can be prevented.
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