发明授权
US07335542B2 Semiconductor device with mushroom electrode and manufacture method thereof
有权
具有蘑菇电极的半导体器件及其制造方法
- 专利标题： Semiconductor device with mushroom electrode and manufacture method thereof
- 专利标题（中）： 具有蘑菇电极的半导体器件及其制造方法
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申请号： US11713599申请日： 2007-03-05
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公开(公告)号： US07335542B2公开(公告)日： 2008-02-26
- 发明人: Kozo Makiyama , Naoya Ikechi , Takahiro Tan
- 申请人： Kozo Makiyama , Naoya Ikechi , Takahiro Tan
- 申请人地址： JP Kawasaki JP Yamanashi
- 专利权人： Fujitsu Limited,Fujitsu Quantum Devices Limited
- 当前专利权人： Fujitsu Limited,Fujitsu Quantum Devices Limited
- 当前专利权人地址： JP Kawasaki JP Yamanashi
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP.
- 优先权： JP2001-236301 20010803; JP2002-019361 20020129
- 主分类号： H01L21/338
- IPC分类号： H01L21/338 ; H01L21/44
摘要：
A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.
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