Invention Grant
US07338689B2 Composition for forming low dielectric thin film including siloxane monomer or siloxane polymer having only one type of stereoisomer and method of producing low dielectric thin film using same
失效
用于形成包含仅具有一种立体异构体的硅氧烷单体或硅氧烷聚合物的低电介质薄膜的组合物和使用其制备低电介质薄膜的方法
- Patent Title: Composition for forming low dielectric thin film including siloxane monomer or siloxane polymer having only one type of stereoisomer and method of producing low dielectric thin film using same
- Patent Title (中): 用于形成包含仅具有一种立体异构体的硅氧烷单体或硅氧烷聚合物的低电介质薄膜的组合物和使用其制备低电介质薄膜的方法
-
Application No.: US11218753Application Date: 2005-09-06
-
Publication No.: US07338689B2Publication Date: 2008-03-04
- Inventor: Hyeon Jin Shin , Hyun Dam Jeong
- Applicant: Hyeon Jin Shin , Hyun Dam Jeong
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: KR10-2005-0011399 20050207
- Main IPC: B05D3/02
- IPC: B05D3/02
Abstract:
Disclosed herein is a composition for forming a low dielectric thin film, which includes silane monomers having only any one of stereoisomer, or a siloxane polymer produced by polymerizing the monomers, and a method of producing the low dielectric thin film using the same. When using the composition, mechanical properties are excellent because tacticity of a matrix is improved, and formation of pores is increased due to a molecular free volume, thus it is possible to produce a low dielectric thin film having low dielectricity.
Public/Granted literature
Information query
