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公开(公告)号：US07582718B2
公开(公告)日：2009-09-01
申请号：US10868222
申请日：2004-06-16
Applicant: Jae Jun Lee , Jong Baek Seon , Hyun Dam Jeong , Jin Heong Yim , Hyeon Jin Shin
Inventor： Jae Jun Lee , Jong Baek Seon , Hyun Dam Jeong , Jin Heong Yim , Hyeon Jin Shin
IPC: C08G77/60
CPC classification number: C08G77/50 , C07F7/0838 , C07F7/1804
Abstract: A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant. Furthermore, the siloxane polymer retains a relatively low carbon content but a high SiO2 content, resulting in its improved applicability to semiconductor devices. Therefore, the siloxane polymer is advantageously used as a material for dielectric films of semiconductor devices.
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2.发明授权Multi-functional cyclic silicate compound, siloxane-based polymer prepared from the compound and process of producing insulating film using the polymer 有权多功能环状硅酸盐化合物，由该化合物制备的硅氧烷基聚合物和使用聚合物制备绝缘膜的方法公开(公告)号：US07867574B2
公开(公告)日：2011-01-11
申请号：US12318650
申请日：2009-01-05
Applicant: Hyeon Jin Shin , Hyun Dam Jeong , Jong Back Seon , Kwang Hee Lee , Sang Kook Mah
Inventor： Hyeon Jin Shin , Hyun Dam Jeong , Jong Back Seon , Kwang Hee Lee , Sang Kook Mah
IPC: B05D3/02
CPC classification number: C09D183/04 , C08G77/045 , C08G77/06 , C08G77/50 , Y10T428/31663
Abstract: A multi-functional cyclic silicate compound, a siloxane-based polymer prepared from the silicate compound and a process of producing an insulating film using the siloxane-based polymer. The silicate compound of the present invention is highly compatible with conventional pore-generating substances and hardly hygroscopic, so it is useful for the preparation of a siloxane-based polymer suitable to a SOG process. Furthermore, a film produced by the use of such siloxane-based polymer is excellent in mechanical properties, thermal stability and crack resistance and enhanced in insulating properties by virtue of its low hygroscopicity. Therefore, in the field of semiconductor production, this film is of great use as an insulating film.
Abstract translation: 多官能环状硅酸盐化合物，由硅酸盐化合物制备的硅氧烷类聚合物和使用硅氧烷类聚合物制造绝缘膜的方法。 本发明的硅酸盐化合物与常规的孔产生物质高度相容，几乎不吸湿，因此可用于制备适用于SOG工艺的硅氧烷类聚合物。 此外，通过使用这种硅氧烷基聚合物制成的膜由于其低吸湿性而具有优异的机械性能，热稳定性和抗裂纹性以及增强的绝缘性能。 因此，在半导体制造领域中，该膜作为绝缘膜具有很大的用途。
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3.发明授权Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound 有权多功能环状硅氧烷化合物以及使用由该化合物制备的硅氧烷类聚合物制备电介质膜的方法公开(公告)号：US07750176B2
公开(公告)日：2010-07-06
申请号：US12458009
申请日：2009-06-29
Applicant: Hyeon Jin Shin , Hyun Dam Jeong , Jong Baek Seon , Sang Kook Mah , Jin Heong Yim , Jae Jun Lee , Kwang Hee Lee , Jung Bae Kim
Inventor： Hyeon Jin Shin , Hyun Dam Jeong , Jong Baek Seon , Sang Kook Mah , Jin Heong Yim , Jae Jun Lee , Kwang Hee Lee , Jung Bae Kim
CPC classification number: C07F7/21 , Y10T428/31663
Abstract: A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.
Abstract translation: 多官能环状硅氧烷化合物（A），由化合物（A）或化合物（A）制备的硅氧烷类（共）聚合物和至少一种具有有机桥（B）的Si单体，无环烷氧基 硅烷单体（C）和直链硅氧烷单体（D）; 以及使用该聚合物制备电介质膜的方法。 本发明的硅氧烷化合物具有高反应性，因此由该化合物制备的聚合物的机械性能，热稳定性和抗裂性优异，并且由于与常规孔产生材料的相容性而具有低的介电常数。 此外，低含量的碳和高含量的SiO 2增强了其在制造半导体的过程中的适用性，其中它被广泛用作电介质膜。
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4.发明申请Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer 有权多官能直链硅氧烷化合物，由该化合物制备的硅氧烷聚合物，以及通过使用聚合物形成电介质膜的方法公开(公告)号：US20090321894A1
公开(公告)日：2009-12-31
申请号：US12458532
申请日：2009-07-15
Applicant: Jae Jun Lee , Jong Baek Seon , Hyun Dam Jeong , Jin Heong Yim , Hyeon Jin Shin
Inventor： Jae Jun Lee , Jong Baek Seon , Hyun Dam Jeong , Jin Heong Yim , Hyeon Jin Shin
CPC classification number: C08G77/50 , C07F7/0838 , C07F7/1804
Abstract: A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant. Furthermore, the siloxane polymer retains a relatively low carbon content but a high SiO2 content, resulting in its improved applicability to semiconductor devices. Therefore, the siloxane polymer is advantageously used as a material for dielectric films of semiconductor devices.
Abstract translation: 新型多功能直链硅氧烷化合物，由硅氧烷化合物制备的硅氧烷聚合物，以及通过使用硅氧烷聚合物形成电介质膜的方法。 线性硅氧烷聚合物具有增强的机械性能（例如模量），优异的热稳定性，低碳含量和低吸湿性，并且通过直链硅氧烷化合物的均聚或线性硅氧烷化合物与另一单体的共聚制备。 可以通过热固化含有高反应性的硅氧烷聚合物的涂布溶液来制造电介质膜。 由硅氧烷化合物制备的硅氧烷聚合物不仅具有令人满意的机械性能，热稳定性和抗裂性，而且具有低吸湿性和与成孔材料的优异相容性，导致低的介电常数。 此外，硅氧烷聚合物保留相对低的碳含量，但SiO 2含量高，从而改善了对半导体器件的适用性。 因此，硅氧烷聚合物有利地用作半导体器件的介电膜的材料。
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5.发明授权Method for forming interlayer dielectric film for semiconductor device by using polyhedral molecular silsesquioxane 有权通过使用多面体分子倍半硅氧烷形成半导体器件的层间绝缘膜的方法公开(公告)号：US07470634B2
公开(公告)日：2008-12-30
申请号：US10995211
申请日：2004-11-24
Applicant: Hyeon Jin Shin , Hyun Dam Jeong
Inventor： Hyeon Jin Shin , Hyun Dam Jeong
IPC: H01L21/4763 , B32B9/04
CPC classification number: C08G77/04 , C08G77/06 , C08G77/50 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3124 , H01L21/31633 , H01L21/31695 , H01L21/7682 , Y10T428/31663
Abstract: Disclosed herein is a method for forming an interlayer dielectric film for a semiconductor device by using a polyhedral molecular silsesquioxane. According to the method, the polyhedral molecular silsesquioxane is used as a monomer for a siloxane-based resin or as a pore-forming agent (porogen) to prepare a composition for forming a dielectric film, and the composition is coated on a substrate to form an interlayer dielectric film for a semiconductor device. The interlayer dielectric film formed by the method has a low dielectric constant and shows superior mechanical properties.
Abstract translation: 本文公开了一种通过使用多面体分子倍半硅氧烷形成用于半导体器件的层间绝缘膜的方法。 根据该方法，使用多面体分子倍半硅氧烷作为硅氧烷类树脂的单体或成孔剂（致孔剂），制备电介质膜形成用组合物，将该组合物涂布在基材上形成 用于半导体器件的层间绝缘膜。 通过该方法形成的层间绝缘膜具有低介电常数并且显示出优异的机械性能。
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Patent Agency Ranking
6.发明授权Semiconductor thin film using self-assembled monolayers and methods of production thereof 有权使用自组装单层的半导体薄膜及其制造方法公开(公告)号：US07633087B2
公开(公告)日：2009-12-15
申请号：US11417026
申请日：2006-05-03
Applicant: Hyeon Jin Shin , Young Su Chung , Hyun Dam Jeong , Sang Heon Hyun , Jong Baek Seon
Inventor： Hyeon Jin Shin , Young Su Chung , Hyun Dam Jeong , Sang Heon Hyun , Jong Baek Seon
CPC classification number: C23C18/1225 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C23C18/1204 , C23C18/1275 , H01L21/02381 , H01L21/02488 , H01L21/02499 , H01L21/02502 , H01L21/02551 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/02658
Abstract: A semiconductor thin film using a self-assembled monolayer (SAM) and a method for producing the semiconductor thin film are provided. According to the semiconductor thin film, a uniform inorganic seed layer is formed by using the self-assembled monolayer so that the adhesion between an insulating layer and a semiconductor layer is enhanced and thus the surface tension is reduced, thereby allowing the semiconductor thin film to have high quality without defects.
Abstract translation: 提供了使用自组装单层（SAM）的半导体薄膜和制造半导体薄膜的方法。 根据半导体薄膜，通过使用自组装单层形成均匀的无机种子层，使得绝缘层和半导体层之间的粘附性增强，因此表面张力降低，从而使半导体薄膜 具有高质量无缺陷。
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7.发明授权Multi-functional cyclic silicate compound, siloxane-based polymer prepared from the compound and process of producing insulating film using the polymer 有权多功能环状硅酸盐化合物，由该化合物制备的硅氧烷基聚合物和使用聚合物制备绝缘膜的方法公开(公告)号：US07491785B2
公开(公告)日：2009-02-17
申请号：US10841553
申请日：2004-05-10
Applicant: Hyeon Jin Shin , Hyun Dam Jeong , Jong Back Seon , Kwang Hee Lee , Sang Kook Mah
Inventor： Hyeon Jin Shin , Hyun Dam Jeong , Jong Back Seon , Kwang Hee Lee , Sang Kook Mah
CPC classification number: C09D183/04 , C08G77/045 , C08G77/06 , C08G77/50 , Y10T428/31663
Abstract: A multi-functional cyclic silicate compound, a siloxane-based polymer prepared from the silicate compound and a process of producing an insulating film using the siloxane-based polymer. The silicate compound of the present invention is highly compatible with conventional pore-generating substances and hardly hygroscopic, so it is useful for the preparation of a siloxane-based polymer suitable to a SOG process. Furthermore, a film produced by the use of such siloxane-based polymer is excellent in mechanical properties, thermal stability and crack resistance and enhanced in insulating properties by virtue of its low hygroscopicity. Therefore, in the field of semiconductor production, this film is of great use as an insulating film.
Abstract translation: 多官能环状硅酸盐化合物，由硅酸盐化合物制备的硅氧烷类聚合物和使用硅氧烷类聚合物制造绝缘膜的方法。 本发明的硅酸盐化合物与常规的孔产生物质高度相容，几乎不吸湿，因此可用于制备适用于SOG工艺的硅氧烷类聚合物。 此外，通过使用这种硅氧烷基聚合物制成的膜由于其低吸湿性而具有优异的机械性能，热稳定性和抗裂纹性以及增强的绝缘性能。 因此，在半导体制造领域中，该膜作为绝缘膜具有很大的用途。
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8.发明授权Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer 有权多官能直链硅氧烷化合物，由该化合物制备的硅氧烷聚合物，以及通过使用聚合物形成电介质膜的方法公开(公告)号：US08053173B2
公开(公告)日：2011-11-08
申请号：US12458532
申请日：2009-07-15
Applicant: Jae Jun Lee , Jong Baek Seon , Hyun Dam Jeong , Jin Heong Yim , Hyeon Jin Shin
Inventor： Jae Jun Lee , Jong Baek Seon , Hyun Dam Jeong , Jin Heong Yim , Hyeon Jin Shin
CPC classification number: C08G77/50 , C07F7/0838 , C07F7/1804
Abstract: A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant. Furthermore, the siloxane polymer retains a relatively low carbon content but a high SiO2 content, resulting in its improved applicability to semiconductor devices. Therefore, the siloxane polymer is advantageously used as a material for dielectric films of semiconductor devices.
Abstract translation: 新型多功能直链硅氧烷化合物，由硅氧烷化合物制备的硅氧烷聚合物，以及通过使用硅氧烷聚合物形成电介质膜的方法。 线性硅氧烷聚合物具有增强的机械性能（例如模量），优异的热稳定性，低碳含量和低吸湿性，并且通过直链硅氧烷化合物的均聚或线性硅氧烷化合物与另一单体的共聚制备。 可以通过热固化含有高反应性的硅氧烷聚合物的涂布溶液来制造电介质膜。 由硅氧烷化合物制备的硅氧烷聚合物不仅具有令人满意的机械性能，热稳定性和抗裂性，而且具有低吸湿性和与成孔材料的优异相容性，导致低的介电常数。 此外，硅氧烷聚合物保留相对低的碳含量，但SiO 2含量高，从而改善了对半导体器件的适用性。 因此，硅氧烷聚合物有利地用作半导体器件的介电膜的材料。
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9.发明申请Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound 有权多功能环状硅氧烷化合物以及使用由该化合物制备的硅氧烷类聚合物制备电介质膜的方法公开(公告)号：US20090269942A1
公开(公告)日：2009-10-29
申请号：US12458009
申请日：2009-06-29
Applicant: Hyeon Jin Shin , Hyun Dam Jeong , Jong Baek Seon , Sang Kook Mah , Jin Heong Yim , Jae Jun Lee , Kwang Hee Lee , Jung Bae Kim
Inventor： Hyeon Jin Shin , Hyun Dam Jeong , Jong Baek Seon , Sang Kook Mah , Jin Heong Yim , Jae Jun Lee , Kwang Hee Lee , Jung Bae Kim
IPC: H01L21/312 , C07F7/21
CPC classification number: C07F7/21 , Y10T428/31663
Abstract: A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.
Abstract translation: 多官能环状硅氧烷化合物（A），由化合物（A）或化合物（A）制备的硅氧烷类（共）聚合物和至少一种具有有机桥（B）的Si单体，无环烷氧基 硅烷单体（C）和直链硅氧烷单体（D）; 以及使用该聚合物制备电介质膜的方法。 本发明的硅氧烷化合物具有高反应性，因此由该化合物制备的聚合物的机械性能，热稳定性和抗裂性优异，并且由于与常规孔产生材料的相容性而具有低的介电常数。 此外，低含量的碳和高含量的SiO 2增强了其在制造半导体的过程中的适用性，其中它被广泛用作电介质膜。
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10.发明授权Multi-functional cyclic siloxane compound, a siloxane-based polymer prepared from the compound and a process for preparing a dielectric film by using the polymer 有权多官能环状硅氧烷化合物，由该化合物制备的硅氧烷类聚合物和使用聚合物制备电介质膜的方法公开(公告)号：US07576230B2
公开(公告)日：2009-08-18
申请号：US10878119
申请日：2004-06-29
Applicant: Hyeon Jin Shin , Hyun Dam Jeong , Jong Baek Seon , Sang Kook Mah , Jin Heong Yim , Jae Jun Lee , Kwang Hee Lee , Jung Bae Kim
Inventor： Hyeon Jin Shin , Hyun Dam Jeong , Jong Baek Seon , Sang Kook Mah , Jin Heong Yim , Jae Jun Lee , Kwang Hee Lee , Jung Bae Kim
CPC classification number: C07F7/21 , Y10T428/31663
Abstract: A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.
Abstract translation: 多官能环状硅氧烷化合物（A），由化合物（A）或化合物（A）制备的硅氧烷类（共）聚合物和至少一种具有有机桥（B）的Si单体，无环烷氧基 硅烷单体（C）和直链硅氧烷单体（D）; 以及使用该聚合物制备电介质膜的方法。 本发明的硅氧烷化合物具有高反应性，因此由该化合物制备的聚合物的机械性能，热稳定性和抗裂性优异，并且由于与常规孔产生材料的相容性而具有低的介电常数。 此外，低含量的碳和高含量的SiO 2增强了其在制造半导体的过程中的适用性，其中它被广泛用作电介质膜。
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