发明授权
- 专利标题： Method for manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same
- 专利标题（中）： 用于制造具有硅化物栅电极的半导体器件的方法和包括其的集成电路的制造方法
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申请号： US10810759申请日： 2004-03-26
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公开(公告)号： US07338888B2公开(公告)日： 2008-03-04
- 发明人: Jiong-Ping Lu , Haowen Bu , Shaofeng Yu , Ping Jiang
- 申请人： Jiong-Ping Lu , Haowen Bu , Shaofeng Yu , Ping Jiang
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/44 ; H01L21/76 ; H01L21/4763
摘要：
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing the semiconductor device (100), among other possible steps, includes forming a polysilicon gate electrode over a substrate (110) and forming source/drain regions (170) in the substrate (110) proximate the polysilicon gate electrode. The method further includes forming a blocking layer (180) over the source/drain regions (170), the blocking layer (180) comprising a metal silicide, and siliciding the polysilicon gate electrode to form a silicided gate electrode (150).