发明授权
- 专利标题: Method for manufacturing single-side mirror surface wafer
- 专利标题(中): 单面镜面晶圆的制造方法
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申请号: US10596177申请日: 2004-12-03
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公开(公告)号: US07338904B2公开(公告)日: 2008-03-04
- 发明人: Sakae Koyata , Tadashi Denda , Masashi Norimoto , Kazushige Takaishi
- 申请人: Sakae Koyata , Tadashi Denda , Masashi Norimoto , Kazushige Takaishi
- 申请人地址: JP Tokyo
- 专利权人: SUMCO Corporation
- 当前专利权人: SUMCO Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Greenblum & Bernstein, P.L.C.
- 优先权: JP2003-408222 20031205
- 国际申请: PCT/JP2004/018067 WO 20041203
- 国际公布: WO2005/055302 WO 20050616
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
A surface of a semiconductor wafer which has been lapped is ground. This removes a damage caused on the wafer surface during lapping, thereby increasing the flatness of the wafer surface. Next, the wafer is subjected to composite etching and the both surfaces are polished, i.e., subjected to mirror polishing while the wafer rear surface is slightly polished so as to obtain a single-side mirror surface wafer having a difference between the front and the rear surfaces. As compared to mere acid etching or alkali etching, it is possible to manufacture a single-side mirror surface wafer having a higher flatness.