发明授权
- 专利标题： Spintronic transistor
- 专利标题（中）： 自旋电子晶体管
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申请号： US11488752申请日： 2006-07-19
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公开(公告)号： US07342244B2公开(公告)日： 2008-03-11
- 发明人: Sanjeev Kaushal , Kenji Sugishima , Swaroop Ganguly
- 申请人： Sanjeev Kaushal , Kenji Sugishima , Swaroop Ganguly
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L31/00
摘要：
A semiconductor device including: a substrate comprising silicon; a channel region formed on the substrate; a spin injector formed on the substrate at a first side of the channel region and configured to diffuse a spin-polarized current into the channel region; a spin detector formed on the substrate at a second side of the channel region and configured to receive the spin polarized current from the channel region; and a gate formed on the substrate in an area of the channel region.
公开/授权文献
- US20080017843A1 SPINTRONIC TRANSISTOR 公开/授权日：2008-01-24
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