发明授权
- 专利标题： Spatial bandgap modifications and energy shift of semiconductor structures
- 专利标题（中）： 半导体结构的空间带隙修改和能量偏移
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申请号： US10824838申请日： 2004-04-15
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公开(公告)号： US07344905B2公开(公告)日： 2008-03-18
- 发明人: Peidong Wang , Chih-Cheng Lu , Daryoosh Vakhshoori
- 申请人： Peidong Wang , Chih-Cheng Lu , Daryoosh Vakhshoori
- 申请人地址： US MA Wilmington
- 专利权人： Ahura Corporation
- 当前专利权人： Ahura Corporation
- 当前专利权人地址： US MA Wilmington
- 代理机构： Fish & Richardson P.C.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Semiconductor substrate is disclosed having quantum wells having first bandgap, and quantum wells having second bandgap less than second bandgap. Semiconductor structure is disclosed comprising substrate having quantum wells having given bandgap, other quantum wells modified to bandgap greater than given bandgap. Semiconductor substrate is disclosed comprising wafer having quantum wells, section of first bandgap, and section of second bandgap greater than first bandgap. Method for forming semiconductor substrate is provided, comprising providing wafer having given bandgap, depositing dielectric cap on portion and rapid thermal annealing to tuned bandgap greater than given bandgap. Semiconductor structure is disclosed comprising substrate having quantum wells modified by depositing cap and rapid thermal annealing to tuned bandgap greater than given bandgap. Method for forming semiconductor substrate is disclosed, comprising providing wafer having quantum wells having given bandgap, depositing cap on portion and rapid thermal annealing to tuned bandgap greater than given bandgap.
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