发明授权
- 专利标题: Structure and method for releasing stressy metal films
- 专利标题(中): 用于释放应力金属膜的结构和方法
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申请号: US11300872申请日: 2005-12-15
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公开(公告)号: US07344906B2公开(公告)日: 2008-03-18
- 发明人: Christopher L. Chua , David K. Fork , Koenraed F. Van Schuylenbergh
- 申请人: Christopher L. Chua , David K. Fork , Koenraed F. Van Schuylenbergh
- 申请人地址: US CA Palo Alto
- 专利权人: Palo Alto Research Center Incorporated
- 当前专利权人: Palo Alto Research Center Incorporated
- 当前专利权人地址: US CA Palo Alto
- 代理商 Kent Chen
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method and structure for forming a spring structure that avoids undesirable kinks in the spring is described. The method converts a portion of a release layer such that the converted portion resists etching. The converted portion then serves as an anchor region for a spring structure deposited over the release layer. When the non-converted portions of the release layer are etched, the spring curls out of the plane of a plane.
公开/授权文献
- US20070141742A1 Structure and method for releasing stressy metal films 公开/授权日:2007-06-21
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