发明授权
- 专利标题： Gate dielectric having a flat nitrogen profile and method of manufacture therefor
- 专利标题（中）： 具有平坦氮分布的栅极电介质及其制造方法
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申请号： US10875482申请日： 2004-06-24
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公开(公告)号： US07345001B2公开(公告)日： 2008-03-18
- 发明人: Hiroaki Niimi , Husam N. Alshareef , Rajesh Khamankar , Toan Tran
- 申请人： Hiroaki Niimi , Husam N. Alshareef , Rajesh Khamankar , Toan Tran
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L29/72
- IPC分类号： H01L29/72
摘要：
The present invention provides a gate dielectric having a flat nitrogen profile, a method of manufacture therefor, and a method of manufacturing an integrated circuit including the flat nitrogen profile. In one embodiment, the method of manufacturing the gate dielectric includes forming a gate dielectric layer (410) on a substrate (310), and subjecting the gate dielectric layer (410) to a nitrogen containing plasma process (510), wherein the nitrogen containing plasma process (510) has a ratio of helium to nitrogen of 3:1 or greater.
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