Invention Grant
US07345363B2 Semiconductor device with a rewiring level and method for producing the same
有权
具有重新布线等级的半导体器件及其制造方法
- Patent Title: Semiconductor device with a rewiring level and method for producing the same
- Patent Title (中): 具有重新布线等级的半导体器件及其制造方法
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Application No.: US11362507Application Date: 2006-02-27
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Publication No.: US07345363B2Publication Date: 2008-03-18
- Inventor: Minka Gospodinova-Daltcheva , Harry Huebert , Rajesh Subraya , Jochen Thomas , Ingo Wennemuth
- Applicant: Minka Gospodinova-Daltcheva , Harry Huebert , Rajesh Subraya , Jochen Thomas , Ingo Wennemuth
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Edell, Shapiro & Finnan, LLC
- Priority: DE10339762 20030827
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device includes a plastic package, at least one semiconductor chip and a rewiring level. The rewiring level includes an insulating layer and a rewiring layer. The rewiring layer includes either signal conductor paths and ground or supply conductor paths arranged parallel to one another and alternately, or only signal conductor paths arranged parallel to one another. In the latter case, an electrically conducting layer of metal which can be connected to ground or supply potential is additionally provided as a termination of the rewiring level or in the form of a covering layer.
Public/Granted literature
- US20060244120A1 Semiconductor device with a rewiring level and method for producing the same Public/Granted day:2006-11-02
Information query
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