发明授权
US07345363B2 Semiconductor device with a rewiring level and method for producing the same
有权
具有重新布线等级的半导体器件及其制造方法
- 专利标题: Semiconductor device with a rewiring level and method for producing the same
- 专利标题(中): 具有重新布线等级的半导体器件及其制造方法
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申请号: US11362507申请日: 2006-02-27
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公开(公告)号: US07345363B2公开(公告)日: 2008-03-18
- 发明人: Minka Gospodinova-Daltcheva , Harry Huebert , Rajesh Subraya , Jochen Thomas , Ingo Wennemuth
- 申请人: Minka Gospodinova-Daltcheva , Harry Huebert , Rajesh Subraya , Jochen Thomas , Ingo Wennemuth
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Edell, Shapiro & Finnan, LLC
- 优先权: DE10339762 20030827
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
A semiconductor device includes a plastic package, at least one semiconductor chip and a rewiring level. The rewiring level includes an insulating layer and a rewiring layer. The rewiring layer includes either signal conductor paths and ground or supply conductor paths arranged parallel to one another and alternately, or only signal conductor paths arranged parallel to one another. In the latter case, an electrically conducting layer of metal which can be connected to ground or supply potential is additionally provided as a termination of the rewiring level or in the form of a covering layer.