发明授权
- 专利标题: Structure and method for improved heat conduction for semiconductor devices
- 专利标题(中): 用于半导体器件的热传导的结构和方法
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申请号: US10955238申请日: 2004-09-30
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公开(公告)号: US07345364B2公开(公告)日: 2008-03-18
- 发明人: Daniel Charles Kerr , Alan Sangone Chen , Edward Paul Martin, Jr. , Amal Ma Hamad , William A. Russell
- 申请人: Daniel Charles Kerr , Alan Sangone Chen , Edward Paul Martin, Jr. , Amal Ma Hamad , William A. Russell
- 申请人地址: US PA Allentown
- 专利权人: Agere Systems Inc.
- 当前专利权人: Agere Systems Inc.
- 当前专利权人地址: US PA Allentown
- 主分类号: H01L23/10
- IPC分类号: H01L23/10 ; H01L23/34
摘要:
A thermally conductive structure for a semiconductor integrated circuit and a method for making the structure. The structure comprises one or more vertical and/or horizontal thermally conductive elements disposed proximate a device for improving thermal conductivity from the device to a substrate of the integrated circuit. In one embodiment a heat sink is affixed to the integrated circuit for heat flow from the integrated circuit. The method comprises forming openings in material layers overlying the semiconductor substrate, wherein the openings are disposed proximate the device and extend to the substrate. A thermally conductive material is formed in the openings to provide a thermal path from the device to the substrate.
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