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1.发明授权公开(公告)号：US07498204B2
公开(公告)日：2009-03-03
申请号：US11968693
申请日：2008-01-03
申请人： Daniel Charles Kerr , Alan Sangone Chen , Edward Paul Martin, Jr. , Amal Ma Hamad , William A. Russell
发明人： Daniel Charles Kerr , Alan Sangone Chen , Edward Paul Martin, Jr. , Amal Ma Hamad , William A. Russell
IPC分类号： H01L21/00
CPC分类号： H01L23/3677 , H01L2224/48091 , H01L2924/01327 , H01L2924/1305 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A thermally conductive structure for a semiconductor integrated circuit and a method for making the structure. The structure comprises one or more vertical and/or horizontal thermally conductive elements disposed proximate a device for improving thermal conductivity from the device to a substrate of the integrated circuit. In one embodiment a heat sink is affixed to the integrated circuit for heat flow from the integrated circuit. The method comprises forming openings in material layers overlying the semiconductor substrate, wherein the openings are disposed proximate the device and extend to the substrate. A thermally conductive material is formed in the openings to provide a thermal path from the device to the substrate.
摘要翻译： 一种用于半导体集成电路的导热结构及其制造方法。 该结构包括一个或多个垂直和/或水平导热元件，其设置在靠近器件的位置，以改善从器件到集成电路的衬底的导热性。 在一个实施例中，散热器固定到集成电路以用于来自集成电路的热流。 该方法包括在覆盖半导体衬底的材料层中形成开口，其中开口设置在器件附近并延伸到衬底。 在开口中形成导热材料以提供从器件到衬底的热路径。
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2.发明授权公开(公告)号：US07345364B2
公开(公告)日：2008-03-18
申请号：US10955238
申请日：2004-09-30
申请人： Daniel Charles Kerr , Alan Sangone Chen , Edward Paul Martin, Jr. , Amal Ma Hamad , William A. Russell
发明人： Daniel Charles Kerr , Alan Sangone Chen , Edward Paul Martin, Jr. , Amal Ma Hamad , William A. Russell
CPC分类号： H01L23/3677 , H01L2224/48091 , H01L2924/01327 , H01L2924/1305 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A thermally conductive structure for a semiconductor integrated circuit and a method for making the structure. The structure comprises one or more vertical and/or horizontal thermally conductive elements disposed proximate a device for improving thermal conductivity from the device to a substrate of the integrated circuit. In one embodiment a heat sink is affixed to the integrated circuit for heat flow from the integrated circuit. The method comprises forming openings in material layers overlying the semiconductor substrate, wherein the openings are disposed proximate the device and extend to the substrate. A thermally conductive material is formed in the openings to provide a thermal path from the device to the substrate.
摘要翻译： 一种用于半导体集成电路的导热结构及其制造方法。 该结构包括一个或多个垂直和/或水平导热元件，其设置在靠近器件的位置，以改善从器件到集成电路的衬底的导热性。 在一个实施例中，散热器固定到集成电路以用于来自集成电路的热流。 该方法包括在覆盖半导体衬底的材料层中形成开口，其中开口设置在器件附近并延伸到衬底。 在开口中形成导热材料以提供从器件到衬底的热路径。
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3.发明授权公开(公告)号：US08143120B2
公开(公告)日：2012-03-27
申请号：US13026528
申请日：2011-02-14
IPC分类号： H01L21/8249
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
摘要翻译： 一种用于形成在半导体衬底上具有多个不同集电极掺杂密度的双极结型晶体管的工艺，以及包括具有多个不同集电极掺杂密度的双极结型晶体管的集成电路。 第一组晶体管在形成三阱期间形成，用于为也形成在半导体衬底上的互补金属氧化物半导体场效应晶体管提供三阱隔离。 在形成用于场效应晶体管的栅叠层之后的第二掺杂步骤期间，形成具有不同集电极掺杂密度的附加双极结型晶体管。 通过双极晶体管发射极窗口进行的种植体掺杂形成了与先前形成的双极晶体管不同的掺杂密度的双极晶体管。 根据本发明的一个实施例，形成具有六种不同集电极掺杂剂密度（并因此具有六种不同击穿特性）的双极结型晶体管。
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4.发明授权公开(公告)号：US07449388B2
公开(公告)日：2008-11-11
申请号：US11458270
申请日：2006-07-18
IPC分类号： H01L21/331
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
摘要翻译： 一种用于形成在半导体衬底上具有多个不同集电极掺杂密度的双极结型晶体管的工艺，以及包括具有多个不同集电极掺杂密度的双极结型晶体管的集成电路。 第一组晶体管在形成三阱期间形成，用于为也形成在半导体衬底上的互补金属氧化物半导体场效应晶体管提供三阱隔离。 在形成用于场效应晶体管的栅叠层之后的第二掺杂步骤期间，形成具有不同集电极掺杂密度的附加双极结型晶体管。 通过双极晶体管发射极窗口进行的种植体掺杂形成了与先前形成的双极晶体管不同的掺杂密度的双极晶体管。 根据本发明的一个实施例，形成具有六种不同集电极掺杂剂密度（并因此具有六种不同击穿特性）的双极结型晶体管。
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5.发明申请公开(公告)号：US20110133289A1
公开(公告)日：2011-06-09
申请号：US13026528
申请日：2011-02-14
IPC分类号： H01L21/8249 , H01L27/06
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
摘要翻译： 一种用于形成在半导体衬底上具有多个不同集电极掺杂密度的双极结型晶体管的工艺，以及包括具有多个不同集电极掺杂密度的双极结型晶体管的集成电路。 第一组晶体管在形成三阱期间形成，用于为也形成在半导体衬底上的互补金属氧化物半导体场效应晶体管提供三阱隔离。 在形成用于场效应晶体管的栅叠层之后的第二掺杂步骤期间，形成具有不同集电极掺杂密度的附加双极结型晶体管。 通过双极晶体管发射极窗口进行的种植体掺杂形成了与先前形成的双极晶体管不同的掺杂密度的双极晶体管 根据本发明的一个实施例，形成具有六种不同集电极掺杂剂密度（并因此具有六种不同击穿特性）的双极结型晶体管。
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6.发明申请公开(公告)号：US20090029510A1
公开(公告)日：2009-01-29
申请号：US12243137
申请日：2008-10-01
IPC分类号： H01L21/8249
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
摘要翻译： 一种用于形成在半导体衬底上具有多个不同集电极掺杂密度的双极结型晶体管的工艺，以及包括具有多个不同集电极掺杂密度的双极结型晶体管的集成电路。 第一组晶体管在形成三阱期间形成，用于为也形成在半导体衬底上的互补金属氧化物半导体场效应晶体管提供三阱隔离。 在形成用于场效应晶体管的栅叠层之后的第二掺杂步骤期间，形成具有不同集电极掺杂密度的附加双极结型晶体管。 通过双极晶体管发射极窗口进行的种植体掺杂形成了与先前形成的双极晶体管不同的掺杂密度的双极晶体管。 根据本发明的一个实施例，形成具有六种不同集电极掺杂剂密度（并因此具有六种不同击穿特性）的双极结型晶体管。
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7.发明申请公开(公告)号：US20100173459A1
公开(公告)日：2010-07-08
申请号：US12727304
申请日：2010-03-19
IPC分类号： H01L21/8249
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
摘要翻译： 一种用于形成在半导体衬底上具有多个不同集电极掺杂密度的双极结型晶体管的工艺，以及包括具有多个不同集电极掺杂密度的双极结型晶体管的集成电路。 第一组晶体管在形成三阱期间形成，用于为也形成在半导体衬底上的互补金属氧化物半导体场效应晶体管提供三阱隔离。 在形成用于场效应晶体管的栅叠层之后的第二掺杂步骤期间，形成具有不同集电极掺杂密度的附加双极结型晶体管。 通过双极晶体管发射极窗口进行的种植体掺杂形成了与先前形成的双极晶体管不同的掺杂密度的双极晶体管。 根据本发明的一个实施例，形成具有六种不同集电极掺杂剂密度（并因此具有六种不同击穿特性）的双极结型晶体管。
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8.发明授权公开(公告)号：US07095094B2
公开(公告)日：2006-08-22
申请号：US10953894
申请日：2004-09-29
IPC分类号： H01L27/102
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
摘要翻译： 一种用于形成在半导体衬底上具有多个不同集电极掺杂密度的双极结型晶体管的工艺，以及包括具有多个不同集电极掺杂密度的双极结型晶体管的集成电路。 第一组晶体管在形成三阱期间形成，用于为也形成在半导体衬底上的互补金属氧化物半导体场效应晶体管提供三阱隔离。 在形成用于场效应晶体管的栅叠层之后的第二掺杂步骤期间，形成具有不同集电极掺杂密度的附加双极结型晶体管。 通过双极晶体管发射极窗口进行的种植体掺杂形成了与先前形成的双极晶体管不同的掺杂密度的双极晶体管。 根据本发明的一个实施例，形成具有六种不同集电极掺杂剂密度（并因此具有六种不同击穿特性）的双极结型晶体管。
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9.发明授权公开(公告)号：US07910425B2
公开(公告)日：2011-03-22
申请号：US12727304
申请日：2010-03-19
IPC分类号： H01L21/8249
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
摘要翻译： 一种用于形成在半导体衬底上具有多个不同集电极掺杂密度的双极结型晶体管的工艺，以及包括具有多个不同集电极掺杂密度的双极结型晶体管的集成电路。 第一组晶体管在形成三阱期间形成，用于为也形成在半导体衬底上的互补金属氧化物半导体场效应晶体管提供三阱隔离。 在形成用于场效应晶体管的栅叠层之后的第二掺杂步骤期间，形成具有不同集电极掺杂密度的附加双极结型晶体管。 通过双极晶体管发射极窗口进行的种植体掺杂形成了与先前形成的双极晶体管不同的掺杂密度的双极晶体管。 根据本发明的一个实施例，形成具有六种不同集电极掺杂剂密度（并因此具有六种不同击穿特性）的双极结型晶体管。
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10.发明授权公开(公告)号：US07713811B2
公开(公告)日：2010-05-11
申请号：US12243137
申请日：2008-10-01
IPC分类号： H01L21/8249
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
摘要翻译： 一种用于形成在半导体衬底上具有多个不同集电极掺杂密度的双极结型晶体管的工艺，以及包括具有多个不同集电极掺杂密度的双极结型晶体管的集成电路。 第一组晶体管在形成三阱期间形成，用于为也形成在半导体衬底上的互补金属氧化物半导体场效应晶体管提供三阱隔离。 在形成用于场效应晶体管的栅叠层之后的第二掺杂步骤期间，形成具有不同集电极掺杂密度的附加双极结型晶体管。 通过双极晶体管发射极窗口进行的种植体掺杂形成了与先前形成的双极晶体管不同的掺杂密度的双极晶体管。 根据本发明的一个实施例，形成具有六种不同集电极掺杂剂密度（并因此具有六种不同击穿特性）的双极结型晶体管。
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