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US07345370B2 Wiring patterns formed by selective metal plating 有权
通过选择性金属电镀形成的布线图案

Wiring patterns formed by selective metal plating
摘要:
Conductive sidewall spacer structures are formed using a method that patterns structures (mandrels) and activates the sidewalls of the structures. Metal ions are attached to the sidewalls of the structures and these metal ions are reduced to form seed material. The structures are then trimmed and the seed material is plated to form wiring on the sidewalls of the structures.
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