发明授权
- 专利标题： Magnetoresistive element and magnetic memory device
- 专利标题（中）： 磁阻元件和磁存储器件
-
申请号： US11367483申请日： 2006-03-06
-
公开(公告)号： US07345852B2公开(公告)日： 2008-03-18
- 发明人: Koichiro Inomata , Kentaro Nakajima , Yoshiaki Saito , Masayuki Sagoi , Tatsuya Kishi
- 申请人： Koichiro Inomata , Kentaro Nakajima , Yoshiaki Saito , Masayuki Sagoi , Tatsuya Kishi
- 申请人地址： JP Kawasaki-shi
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP11-262327 19990916; JP11-263741 19990917; JP2000-265663 20000901; JP2000-265664 20000901
- 主分类号： G11B5/39
- IPC分类号： G11B5/39 ; G11C11/15 ; G11C7/00
摘要：
A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.
公开/授权文献
- US20060146451A1 Magnetoresistive element and magnetic memory device 公开/授权日：2006-07-06
信息查询
IPC分类:
