发明授权
US07348611B2 Strained complementary metal oxide semiconductor (CMOS) on rotated wafers and methods thereof
有权
旋转晶片上的应变互补金属氧化物半导体（CMOS）及其方法
- 专利标题： Strained complementary metal oxide semiconductor (CMOS) on rotated wafers and methods thereof
- 专利标题（中）： 旋转晶片上的应变互补金属氧化物半导体（CMOS）及其方法
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申请号： US11112820申请日： 2005-04-22
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公开(公告)号： US07348611B2公开(公告)日： 2008-03-25
- 发明人: Meikei Ieong , Qiqing C. Ouyang , Kern Rim
- 申请人： Meikei Ieong , Qiqing C. Ouyang , Kern Rim
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser
- 代理商 Ido Tuchman, Esq.
- 主分类号： H01L29/73
- IPC分类号： H01L29/73
摘要：
The present invention provides CMOS structures including at least one strained pFET that is located on a rotated semiconductor substrate to improve the device performance. Specifically, the present invention utilizes a Si-containing semiconductor substrate having a (100) crystal orientation in which the substrate is rotated by about 45° such that the CMOS device channels are located along the direction. Strain can be induced upon the CMOS structure including at least a pFET and optionally an nFET, particularly the channels, by forming a stressed liner about the FET, by forming embedded stressed wells in the substrate, or by utilizing a combination of embedded stressed wells and a stressed liner. The present invention also provides methods for fabricating the aforesaid semiconductor structures.
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