Invention Grant
US07348653B2 Resistive memory cell, method for forming the same and resistive memory array using the same
有权
电阻式存储单元，其形成方法和使用其的电阻式存储器阵列
- Patent Title: Resistive memory cell, method for forming the same and resistive memory array using the same
- Patent Title (中): 电阻式存储单元，其形成方法和使用其的电阻式存储器阵列
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Application No.: US11279640Application Date: 2006-04-13
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Publication No.: US07348653B2Publication Date: 2008-03-25
- Inventor: Byeong-Ok Cho , Moon-Sook Lee , Takahiro Yasue
- Applicant: Byeong-Ok Cho , Moon-Sook Lee , Takahiro Yasue
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Marger Johnson & McCollom, P.C.
- Priority: KR10-2005-0032470 20050419
- Main IPC: H01L27/01
- IPC: H01L27/01
Abstract:
A resistive memory cell employs a photoimageable switchable material, which is patternable by actinic irradiation and is reversibly switchable between distinguishable resistance states, as a memory element. Thus, the photoimageable switchable material is directly patterned by the actinic irradiation so that it is possible to fabricate the resistive memory cell through simple processes, and avoiding ashing and stripping steps.
Public/Granted literature
- US20070029546A1 RESISTIVE MEMORY CELL, METHOD FOR FORMING THE SAME AND RESISTIVE MEMORY ARRAY USING THE SAME Public/Granted day:2007-02-08
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