Invention Grant
- Patent Title: Discharge electrode implemented by a wide bandgap semiconductor and a discharge lamp using the same
- Patent Title (中): 由宽带隙半导体实现的放电电极和使用其的放电灯
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Application No.: US10899153Application Date: 2004-07-27
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Publication No.: US07348718B2Publication Date: 2008-03-25
- Inventor: Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Mariko Suzuki , Hiroaki Yoshida
- Applicant: Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Mariko Suzuki , Hiroaki Yoshida
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JPP2003-202518 20030728
- Main IPC: H01J1/13
- IPC: H01J1/13 ; H01J1/14
Abstract:
A discharge electrode emitting electrons into a discharge gas, encompasses an emitter and current supply terminals configured to supply electric current to the emitter. The emitter embraces a wide bandgap semiconductor having at 300 K a bandgap of 2.2 eV or wider. Acceptor impurity atoms and donor impurity atoms being doped in the wide bandgap semiconductor, the activation energy of the donor impurity atoms being larger than the activation energy of the acceptor impurity atoms.
Public/Granted literature
- US20050062392A1 Discharge electrode, a discharge lamp and a method for manufacturing the discharge electrode Public/Granted day:2005-03-24
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