发明授权
- 专利标题: Dual-voltage generation system
- 专利标题(中): 双电压发电系统
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申请号: US11384846申请日: 2006-03-20
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公开(公告)号: US07348832B2公开(公告)日: 2008-03-25
- 发明人: Hsiang-Tai Lu , Cheng-Hsiung Kuo , Yue-Der Chih
- 申请人: Hsiang-Tai Lu , Cheng-Hsiung Kuo , Yue-Der Chih
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Kirkpatrick & Lockhart Preston Gates Ellis LLP
- 主分类号: G05F1/10
- IPC分类号: G05F1/10
摘要:
A voltage generation system for generating operating voltages for memory devices, especially non-volatile memories, from a single external high voltage source. In one embodiment, the system comprises an input terminal for receiving an external voltage, a charge pump for producing a first high voltage based on the external voltage to be higher than the external voltage, a first regulating circuit for regulating the first high voltage to a lower predetermined voltage, a second regulating circuit for generating a second high voltage based on the external voltage to be lower than the external voltage.
公开/授权文献
- US20070216471A1 Dual-voltage generation system 公开/授权日:2007-09-20
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