发明授权
US07349280B2 Memory circuit with automatic precharge function, and integrated circuit device with automatic internal command function 有权
具有自动预充功能的记忆电路,具有自动内部指令功能的集成电路器件

  • 专利标题: Memory circuit with automatic precharge function, and integrated circuit device with automatic internal command function
  • 专利标题(中): 具有自动预充功能的记忆电路,具有自动内部指令功能的集成电路器件
  • 申请号: US11790831
    申请日: 2007-04-27
  • 公开(公告)号: US07349280B2
    公开(公告)日: 2008-03-25
  • 发明人: Yasurou Matsuzaki
  • 申请人: Yasurou Matsuzaki
  • 申请人地址: JP Kawasaki
  • 专利权人: Fujitsu Limited
  • 当前专利权人: Fujitsu Limited
  • 当前专利权人地址: JP Kawasaki
  • 代理机构: Arent Fox LLP
  • 优先权: JP2000-131260 20000428; JP2001-113443 20010412
  • 主分类号: G11C7/00
  • IPC分类号: G11C7/00
Memory circuit with automatic precharge function, and integrated circuit device with automatic internal command function
摘要:
A memory circuit requiring refresh operations a first circuit which receives a command in synchronization with a clock signal, and which generates a first internal command internally and a second circuit which generates a second internal command, e.g., a refresh command, internally in a prescribed refresh cycle. And an internal circuit, according to said first internal command, executes corresponding control through clock-synchronous operations, and when said refresh command is issued, sequentially executes control corresponding to the refresh command and control corresponding to said first internal command through clock-asynchronous operations. When a refresh timing signal is generated, the refresh operation can be intrupted among the external command operations.
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