Invention Grant
US07351594B2 Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier
有权
形成具有具有氧化物层的富钛下电极和定向隧道势垒的磁性随机存取存储器件的方法
- Patent Title: Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier
- Patent Title (中): 形成具有具有氧化物层的富钛下电极和定向隧道势垒的磁性随机存取存储器件的方法
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Application No.: US11673612Application Date: 2007-02-12
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Publication No.: US07351594B2Publication Date: 2008-04-01
- Inventor: Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , In-Gyu Baek , Young-Ki Ha
- Applicant: Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , In-Gyu Baek , Young-Ki Ha
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR2003-0046796 20030710
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Magnetic Random Access Memory (MRAM) devices include a lower electrode and a magnetic tunnel junction on the lower electrode. The magnetic tunnel junction includes a seed layer and a tunneling barrier that is oriented in a same direction as the most closely packed plane direction of the seed layer. An oxide layer may be provided between the lower electrode and the magnetic tunnel junction. The lower electrode may be a titanium-rich TiN layer having more than 50 atomic percent titanium content. Analogous fabrication methods are also described.
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