发明授权
- 专利标题： Method of trimming semiconductor elements with electrical resistance feedback
- 专利标题（中）： 用电阻反馈修整半导体元件的方法
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申请号： US10983314申请日： 2004-11-04
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公开(公告)号： US07351613B2公开(公告)日： 2008-04-01
- 发明人: Bomy Chen , Ya-Fen Lin , Zhitang Song , Songlin Feng
- 申请人： Bomy Chen , Ya-Fen Lin , Zhitang Song , Songlin Feng
- 申请人地址： US CA Sunnyvale
- 专利权人： Silicon Storage Technology, Inc.
- 当前专利权人： Silicon Storage Technology, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： DLA Piper US LLP
- 主分类号： H01L21/82
- IPC分类号： H01L21/82
摘要：
A method of trimming down the volume of a semiconductor resistor element using electrical resistance feedback. After forming conductive material disposed between a pair of electrodes, a voltage is applied to the electrodes to produce an electrical current through the conductive material sufficient to heat and melt away a portion of the conductive material. By reducing the volume of the conductive material, its resistance is increased. The application of the voltage is ceased once the desired dimensions (and thus resistivity) of the conductive material is reached. The resulting semiconductor resistor element could have a fixed resistance, or could have a variable resistance (by using phase change memory material).
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