利索-全球专利检索

  1. 登录
  2. 注册
发明授权
US07351617B2 Semiconductor device and a method of manufacturing the same 有权
半导体装置及其制造方法

Semiconductor device and a method of manufacturing the same
摘要：
To provide a technique required for purifying the interface between an active layer and an insulating film. On a substrate (101), a gate wiring (103) is formed and the surface thereof is covered with a gate oxide film (104). Then, a first insulating film (105a), a second insulating film (105b), a semiconductor film (106) and a protective film (107) are sequentially formed and layered without exposing them to the air. Further, the semiconductor film (106) is irradiated with laser light through the protective film (107). In this way, a TFT may be given good characteristics by completely purifying the interface of the semiconductor film.
摘要（中）：

提供纯化有源层和绝缘膜之间的界面所需的技术。 在基板（101）上形成栅极布线（103），其表面被栅极氧化膜（104）覆盖。 然后，依次形成并层叠第一绝缘膜（105a），第二绝缘膜（105b），半导体膜（106）和保护膜（107），而不将其暴露在空气中。 此外，半导体膜（106）通过保护膜（107）照射激光。 以这种方式，通过完全净化半导体膜的界面，可以赋予TFT良好的特性。

公开/授权文献
信息查询
Espacenet
0/0