Invention Grant
US07351636B2 Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regions
失效
在场氧化物区域上形成包括凸起的氧化物层的分裂非晶体非易失性存储单元的方法
- Patent Title: Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regions
- Patent Title (中): 在场氧化物区域上形成包括凸起的氧化物层的分裂非晶体非易失性存储单元的方法
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Application No.: US11138702Application Date: 2005-05-26
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Publication No.: US07351636B2Publication Date: 2008-04-01
- Inventor: Hee-Seog Jeon , Seung-Beom Yoon , Jeong-Uk Han , Yong-Tae Kim
- Applicant: Hee-Seog Jeon , Seung-Beom Yoon , Jeong-Uk Han , Yong-Tae Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2004-0054050 20040712
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method of forming a split-gate non-volatile memory cell can include forming first and second adjacent floating gates self-aligned to a field oxide region therebetween. An oxide layer is formed covering the first and second adjacent floating gates and the field oxide region, the oxide layer electrically isolates the first and second adjacent floating gates from one another. A control gate is formed on the oxide layer on the first and second adjacent floating gates. Related devices are also disclosed.
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