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US07351636B2 Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regions 失效
在场氧化物区域上形成包括凸起的氧化物层的分裂非晶体非易失性存储单元的方法

Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regions
摘要：
A method of forming a split-gate non-volatile memory cell can include forming first and second adjacent floating gates self-aligned to a field oxide region therebetween. An oxide layer is formed covering the first and second adjacent floating gates and the field oxide region, the oxide layer electrically isolates the first and second adjacent floating gates from one another. A control gate is formed on the oxide layer on the first and second adjacent floating gates. Related devices are also disclosed.
摘要（中）：

形成分闸非易失性存储单元的方法可以包括形成与其之间的场氧化物区域自对准的第一和第二相邻浮置栅极。 形成覆盖第一和第二相邻浮动栅极和场氧化物区域的氧化物层，氧化物层将第一和第二相邻浮栅彼此电隔离。 控制栅极形成在第一和第二相邻浮动栅极上的氧化物层上。 还公开了相关设备。

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