Invention Grant
- Patent Title: Removing whisker defects
- Patent Title (中): 去除晶须缺陷
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Application No.: US11169176Application Date: 2005-06-27
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Publication No.: US07351663B1Publication Date: 2008-04-01
- Inventor: Alex Kabansky , Hean-Cheal Lee , Sundar Narayanan , Prabhuram Gopalan , Vinay Krishna
- Applicant: Alex Kabansky , Hean-Cheal Lee , Sundar Narayanan , Prabhuram Gopalan , Vinay Krishna
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Evan Law Group LLC
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A method of removing a defect from a gate stack on a substrate, comprises treating the gate stack with a plasma. The plasma comprises fluorine, the gate stack comprises a gate layer and a metallic layer, and substantially no photoresist is present on the substrate.
Information query
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