公开(公告)号：US06774012B1

公开(公告)日：2004-08-10

申请号：US10290841

申请日：2002-11-08

申请人： Sundar Narayanan

发明人： Sundar Narayanan

IPC分类号： H01L21322

CPC分类号： H01L21/67109 ,  H01L21/28247

摘要： An improved furnace system and method is provided to substantially minimize, if not eliminate, ambient air from entering a heated chamber of the furnace system during a critical processing step. The furnace system can be used in, for example, an oxidation step where ambient air containing oxygen is prevented from entering an atmospheric pressure tube by essentially purging potential leak areas with an inert gas, such as nitrogen, at the critical moment during temperature ramp up and ramp down, and prior to temperature stabilization and the introduction of an oxidizing gas. If oxygen is not present within the tube, then a tungsten sidewall surface of a gate conductor, for example, will not inadvertently oxidize at the critical pre- and post-oxidation moments. However, if steam is present where hydrogen is available with oxygen, the underlying polysilicon sidewall surface will selectively oxidize instead of the overlying tungsten. The inert gas-filled containers are retrofitted to potential leak areas of not only the tube, but also a torch that is used to forward heated gas into the tube.

摘要翻译： 提供了一种改进的炉系统和方法，以在临界处理步骤中大致最小化（如果不消除）环境空气进入炉系统的加热室。 炉系统可用于例如氧化步骤，其中通过在温度升高期间的关键时刻基本上用惰性气体（例如氮气）清除潜在的泄漏区域，防止含有氧的环境空气进入大气压力管 并降温，并在温度稳定和引入氧化气体之前。 如果管内不存在氧气，则栅极导体的钨侧壁表面例如在临界氧化前和氧化后的时刻不会无意中氧化。 然而，如果存在氢气可用于氧气的蒸汽，则下游的多晶硅侧壁表面将选择性地氧化而不是上覆的钨。 惰性气体填充的容器不仅被改装到潜在的泄漏区域，而且还被用于将加热气体送入管中的火炬。

公开(公告)号：US07371637B2

公开(公告)日：2008-05-13

申请号：US10950332

申请日：2004-09-24

申请人： Krishnaswamy Ramkumar ,  Sundar Narayanan

发明人： Krishnaswamy Ramkumar ,  Sundar Narayanan

IPC分类号： H01L21/20

CPC分类号： H01L21/022 ,  H01L21/0217 ,  H01L21/02233 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/3144 ,  H01L29/4941 ,  H01L29/78

摘要： A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.

摘要翻译： 制造半导体结构的方法包括在衬底上形成氧化物层; 在氧化物层上形成氮化硅层; 在NO中退火层; 并在氨中退火层。 氧化物层和氮化硅层的等效氧化物厚度在一起为至多25埃。

公开(公告)号：US07351663B1

公开(公告)日：2008-04-01

申请号：US11169176

申请日：2005-06-27

申请人： Alex Kabansky ,  Hean-Cheal Lee ,  Sundar Narayanan ,  Prabhuram Gopalan ,  Vinay Krishna

发明人： Alex Kabansky ,  Hean-Cheal Lee ,  Sundar Narayanan ,  Prabhuram Gopalan ,  Vinay Krishna

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/28247 ,  H01L21/02071 ,  H01L21/28061 ,  H01L21/32138

摘要： A method of removing a defect from a gate stack on a substrate, comprises treating the gate stack with a plasma. The plasma comprises fluorine, the gate stack comprises a gate layer and a metallic layer, and substantially no photoresist is present on the substrate.

摘要翻译： 从衬底上的栅极堆叠中去除缺陷的方法包括用等离子体处理栅极堆叠。 等离子体包括氟，栅极堆叠包括栅极层和金属层，并且基板上基本上不存在光致抗蚀剂。

公开(公告)号：US06803330B2

公开(公告)日：2004-10-12

申请号：US09975256

申请日：2001-10-12

申请人： Krishnaswamy Ramkumar ,  Sundar Narayanan

发明人： Krishnaswamy Ramkumar ,  Sundar Narayanan

IPC分类号： H01L2131

CPC分类号： H01L21/28185 ,  H01L21/28202 ,  H01L29/518

摘要： A method of nitriding a gate oxide layer by annealing a preformed oxide layer with nitric oxide (NO) gas is disclosed. The nitridation process can be carried out at lower temperatures and pressures than a conventional nitrous oxide anneal while still achieving acceptable levels of nitridation. The nitridation process can be conducted at atmospheric or sub-atmospheric pressures. As a result, the nitridation process can be used to form nitrided gate oxide layers in-situ in a CVD furnace. The nitrided gate oxide layer can optionally be reoxidized in a second oxidation step after the nitridation step. A gate electrode layer (e.g., boron doped polysilicon) can then be deposited on top of the nitrided gate oxide layer or on top of the reoxidized and nitrided gate oxide layer.

摘要翻译： 公开了通过用一氧化氮（NO）气体退火预形成的氧化物层来对栅极氧化物层进行氮化的方法。 氮化过程可以在比常规氧化亚氮退火更低的温度和压力下进行，同时仍然达到可接受的氮化水平。 氮化过程可以在大气压或低于大气压的压力下进行。 结果，可以使用氮化工艺在CVD炉中原位形成氮化的栅极氧化物层。 氮化栅氧化层可以在氮化步骤后的第二氧化步骤中任选地再氧化。 然后可以在氮化栅极氧化物层的顶部上或在再氧化和氮化的栅极氧化物层的顶部上沉积栅极电极层（例如，硼掺杂的多晶硅）。

公开(公告)号：US06664120B1

公开(公告)日：2003-12-16

申请号：US10023065

申请日：2001-12-17

申请人： Sundar Narayanan ,  Krishnaswamy Ramkumar

发明人： Sundar Narayanan ,  Krishnaswamy Ramkumar

IPC分类号： H01L2166

CPC分类号： H01L22/20 ,  G01N1/32 ,  G01N19/06 ,  H01L22/34

摘要： A method and a structure are provided for measuring a concentration of an impurity within a layer arranged upon a semiconductor substrate. The method may include exposing the layer and semiconductor substrate to oxidizing conditions and determining a difference in total dielectric thickness above the substrate from before to after exposing the layer and substrate. The difference may be correlated to a concentration of the impurity. In some cases, the method may include designating a plurality of measurement locations on the layer such that a concentration profile of the impurity within the layer may be determined. In some embodiments, exposing the layer and substrate may include forming an oxidized interface between the layer and the semiconductor substrate. Preferably, the oxidized interface is thicker underneath portions of the layer with a lower concentration of the impurity than underneath portions of the layer with a higher concentration of the impurity.

摘要翻译： 提供了一种测量布置在半导体衬底上的层内的杂质浓度的方法和结构。 该方法可以包括将层和半导体衬底暴露于氧化条件，并确定在暴露层和衬底之前至之后的衬底上的总电介质厚度的差异。 该差异可能与杂质的浓度相关。 在一些情况下，该方法可以包括指定层上的多个测量位置，使得可以确定该层内的杂质的浓度分布。 在一些实施例中，暴露层和衬底可以包括在层和半导体衬底之间形成氧化界面。 优选地，具有较低浓度的杂质的层的下部的氧化界面比具有较高浓度杂质的层的下部更厚。

公开(公告)号：US08445381B2

公开(公告)日：2013-05-21

申请号：US11961750

申请日：2007-12-20

申请人： Krishnaswamy Ramkumar ,  Sundar Narayanan

发明人： Krishnaswamy Ramkumar ,  Sundar Narayanan

IPC分类号： H01L21/02

CPC分类号： H01L21/022 ,  H01L21/0217 ,  H01L21/02233 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/3144 ,  H01L29/4941 ,  H01L29/78

摘要： A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.

摘要翻译： 制造半导体结构的方法包括在衬底上形成氧化物层; 在氧化物层上形成氮化硅层; 在NO中退火层; 并在氨中退火层。 氧化物层和氮化硅层的等效氧化物厚度在一起为至多25埃。

公开(公告)号：US07172914B1

公开(公告)日：2007-02-06

申请号：US09753011

申请日：2001-01-02

申请人： Sundar Narayanan

发明人： Sundar Narayanan

IPC分类号： H01L21/00 ,  H01L21/337 ,  H01L21/8238 ,  H01L21/331 ,  H01L21/76

CPC分类号： H01L21/76232 ,  H01L21/31612 ,  H01L21/3185

摘要： A method of forming a semiconductor structure includes forming an isolation region in a semiconductor substrate. A first oxide layer is on the substrate, a first sacrificial layer is on the first oxide layer, and a first nitride layer is on the first sacrificial layer. The first oxide layer may be a screen oxide layer, and the method provides consistency in the thickness of the screen oxide layer.

摘要翻译： 形成半导体结构的方法包括在半导体衬底中形成隔离区。 第一氧化物层在衬底上，第一牺牲层在第一氧化物层上，第一氮化物层在第一牺牲层上。 第一氧化物层可以是屏幕氧化物层，并且该方法提供了屏幕氧化物层的厚度的一致性。

公开(公告)号：US06964929B1

公开(公告)日：2005-11-15

申请号：US10137244

申请日：2002-05-02

申请人： Sundar Narayanan ,  Chidambaram Kallingal

发明人： Sundar Narayanan ,  Chidambaram Kallingal

IPC分类号： H01L21/033 ,  H01L21/28 ,  H01L21/302 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/32139 ,  H01L21/28123 ,  H01L21/31111

摘要： A method of making a semiconductor structure includes trimming a patterned hard mask with a wet etch, wherein the hard mask is on a gate layer; and etching the gate layer. In making multiple structures on a semiconductor wafer, an average width of lines in the patterned hard mask is trimmed by at least 100 Å.

摘要翻译： 制造半导体结构的方法包括用湿蚀刻修整图案化的硬掩模，其中硬掩模在栅极层上; 并蚀刻栅极层。 在半导体晶片上制作多个结构时，图案化硬掩模中的线的平均宽度被修剪至少100埃。

公开(公告)号：US06905893B1

公开(公告)日：2005-06-14

申请号：US10289020

申请日：2002-11-05

申请人： Sundar Narayanan ,  Krishnaswamy Ramkumar

发明人： Sundar Narayanan ,  Krishnaswamy Ramkumar

IPC分类号： G01N1/32 ,  G01N19/06 ,  H01L21/66 ,  H01L23/544

CPC分类号： H01L22/20 ,  G01N1/32 ,  G01N19/06 ,  H01L22/34

摘要： A method is provided for determining a concentration profile of an impurity within a layer of a semiconductor topography. The method may include exposing the layer and an underlying layer to oxidizing conditions. In addition, the method may include comparing thickness measurements of total dielectric above the underlying layer taken before and after exposing the topography to oxidizing conditions . In some cases, the comparison may include plotting pre-oxidation thickness measurements versus post-oxidation measurements. In other embodiments, the comparison may include determining differences between the pre-oxidation and post-oxidation thickness measurements and correlating the differences to concentrations of the impurity. In some cases, such a correlation may include subtracting a concentration of the impurity at a first location along the semiconductor topography from a concentration of the impurity at a second location along the semiconductor topography.

摘要翻译： 提供了一种用于确定半导体形貌层内的杂质的浓度分布的方法。 该方法可以包括将层和下层暴露于氧化条件。 此外，该方法可以包括将暴露于地形之前和之后的所述下层的总电介质的厚度测量值与氧化条件进行比较。 在某些情况下，比较可能包括绘制预氧化厚度测量值与氧化后测量值。 在其他实施例中，比较可以包括确定预氧化和后氧化厚度测量之间的差异并将差异与杂质的浓度相关联。 在一些情况下，这种相关可以包括沿着半导体形貌从第二位置处的杂质浓度减去沿着半导体形貌的第一位置处的杂质的浓度。

公开(公告)号：US20050067663A1

公开(公告)日：2005-03-31

申请号：US10950332

申请日：2004-09-24

申请人： Krishnaswamy Ramkumar ,  Sundar Narayanan

发明人： Krishnaswamy Ramkumar ,  Sundar Narayanan

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L29/49 ,  H01L29/78 ,  H01L21/20

CPC分类号： H01L21/022 ,  H01L21/0217 ,  H01L21/02233 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/3144 ,  H01L29/4941 ,  H01L29/78

摘要： A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.

摘要翻译： 制造半导体结构的方法包括在衬底上形成氧化物层; 在氧化物层上形成氮化硅层; 在NO中退火层; 并在氨中退火层。 氧化物层和氮化硅层的等效氧化物厚度在一起为至多25埃。