Etching solution for silicon oxide method of manufacturing a semiconductor device using the same

Invention Grant

US07351667B2 Etching solution for silicon oxide method of manufacturing a semiconductor device using the same 失效

Title translation: 用于制造使用其的半导体器件的氧化硅蚀刻方法

Please log in to see more content

Patent Title: Etching solution for silicon oxide method of manufacturing a semiconductor device using the same
Patent Title (中): 用于制造使用其的半导体器件的氧化硅蚀刻方法
Application No.: US11580937

Application Date: 2006-10-16
Publication No.: US07351667B2

Publication Date: 2008-04-01
Inventor: Dong-Won Hwang , Hun-Jung Yi , Kwang-Shin Lim , Jung-Dae Park
Applicant: Dong-Won Hwang , Hun-Jung Yi , Kwang-Shin Lim , Jung-Dae Park
Applicant Address: KR Suwon-si, Gyeonggi-do
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Suwon-si, Gyeonggi-do
Agency: Volentine & Whitt, PLLC
Priority: KR10-2005-0101017 20051026
Main IPC: H01L21/469
IPC: H01L21/469

Etching solution for silicon oxide method of manufacturing a semiconductor device using the same

Abstract:

An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.

Abstract(Chinese):

在用于扩大通过氧化硅层形成的开口的工艺中可以使用用于氧化硅的蚀刻溶液。蚀刻溶液包含约0.2至约5.0重量％的氟化氢溶液，约0.05至约20.0重量％的氟化铵溶液，约40.0至约70.0重量％的烷基氢氧化物溶液和剩余的水。蚀刻溶液可以蚀刻氧化硅层而不损坏由开口暴露的金属硅化物层。

Public/Granted literature

US20070090325A1 Etching solution for silicon oxide and method of manufacturing a semiconductor device using the same Public/Granted day:2007-04-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理