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    PLATING METHOD USING ANALYSIS PHOTORESIST RESIDUE IN PLATING SOLUTION
    1.
    发明申请
    PLATING METHOD USING ANALYSIS PHOTORESIST RESIDUE IN PLATING SOLUTION 审中-公开
    在分散溶液中使用分析光电残留的镀层方法

    公开(公告)号：US20120183696A1

    公开(公告)日：2012-07-19

    申请号：US13279785

    申请日：2011-10-24

    申请人： Jung-Dae Park ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sung-Hoon Bae ,  Yoon-Mi Lee ,  Da-Hee Lee ,  Min-Jung Kim

    发明人： Jung-Dae Park ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sung-Hoon Bae ,  Yoon-Mi Lee ,  Da-Hee Lee ,  Min-Jung Kim

    IPC分类号： B05D1/18 ,  B05D3/02 ,  C25D21/14

    CPC分类号： C25D21/12

    摘要： A plating method includes supplying a plating solution into a plating bath, immersing a first substrate having a lower metal interconnection and a photoresist pattern in the plating solution, performing a first plating process and forming a first plating pattern on the first substrate, removing the first substrate from the plating solution, collecting a sample of the plating solution, analyzing a photoresist residue included in the sample, immersing a second substrate in the plating solution, and performing a second plating process and forming a second plating pattern on the second substrate.

    摘要翻译： 电镀方法包括将电镀溶液供应到电镀槽中，将具有下金属互连和光致抗蚀剂图案的第一衬底浸入电镀液中，在第一衬底上进行第一电镀工艺和形成第一电镀图案， 收集电镀溶液样品，分析样品中包含的光致抗蚀剂残渣，将第二衬底浸入电镀溶液中，并在第二衬底上进行第二电镀工艺和形成第二电镀图案。

    Methods of manufacturing a semiconductor device using compositions for etching copper
    2.
    发明授权
    Methods of manufacturing a semiconductor device using compositions for etching copper 有权
    使用用于蚀刻铜的组合物制造半导体器件的方法

    公开(公告)号：US07951653B1

    公开(公告)日：2011-05-31

    申请号：US12948331

    申请日：2010-11-17

    申请人： Jung-Dae Park ,  Da-Hee Lee ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Kwang-Shin Lim

    发明人： Jung-Dae Park ,  Da-Hee Lee ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Kwang-Shin Lim

    IPC分类号： H01L21/00

    CPC分类号： H01L21/32134 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

    摘要翻译： 制造半导体器件的方法包括制备其上形成有铜的引线的衬底。 该方法还包括通过发射激光束切割引信线，以及将用于蚀刻铜的组合物施加到基底上，以精细蚀刻引信线的切割区域并基本上除去铜残留物和氧化铜残留物中的至少一种 保留在切割区附近。 用于蚀刻铜的组合物包括约0.01至约10重量％的有机酸，约0.01至1.0重量％的氧化剂和质子溶剂。

    SEMICONDUCTOR WET ETCHANT AND METHOD OF FORMING INTERCONNECTION STRUCTURE USING THE SAME
    7.
    发明申请
    SEMICONDUCTOR WET ETCHANT AND METHOD OF FORMING INTERCONNECTION STRUCTURE USING THE SAME 有权
    SEMICONDUCTOR WET ETCHANT AND METHOD OF FORMING INTERCONNISSION STRUCTURE WITH THE SAME

    公开(公告)号：US20090017626A1

    公开(公告)日：2009-01-15

    申请号：US12168952

    申请日：2008-07-08

    申请人： Jung-Dae Park ,  Young You ,  Tae-Hyo Choi ,  Hun-Jung Yi ,  Kun-Hyung Lee

    发明人： Jung-Dae Park ,  Young You ,  Tae-Hyo Choi ,  Hun-Jung Yi ,  Kun-Hyung Lee

    IPC分类号： H01L21/311 ,  C09K13/08

    CPC分类号： H01L21/02087 ,  C09K13/08 ,  H01L21/0209 ,  H01L21/31111 ,  H01L21/32134

    摘要： A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl−).

    摘要翻译： 半导体湿蚀刻剂包括去离子水，氟基化合物，氧化剂和无机盐。 基于蚀刻剂的总重量，氟系化合物的浓度为0.25〜10.0重量％，氧化剂的浓度相对于蚀刻剂的总重量为0.45〜3.6重量％，无机盐的浓度 相对于蚀刻剂的总重量为1.0〜5.0重量％。 无机盐包括铵离子（NH 4 +）和氯离子（Cl - ）中的至少一种。

    COMPOSITION FOR REMOVING A POLYMERIC CONTAMINANT AND METHOD OF REMOVING A POLYMERIC CONTAMINANT USING THE SAME
    9.
    发明申请
    COMPOSITION FOR REMOVING A POLYMERIC CONTAMINANT AND METHOD OF REMOVING A POLYMERIC CONTAMINANT USING THE SAME 有权
    用于除去聚合物污染物的组合物及其使用该聚合物的聚合物污染物的方法

    公开(公告)号：US20080051313A1

    公开(公告)日：2008-02-28

    申请号：US11840165

    申请日：2007-08-16

    申请人： Sang-Mi Lee ,  Kwang-Shin Lim ,  Jung-Dae Park ,  Tae-Hyo Choi

    发明人： Sang-Mi Lee ,  Kwang-Shin Lim ,  Jung-Dae Park ,  Tae-Hyo Choi

    IPC分类号： C11D3/20

    CPC分类号： C11D11/0047 ,  C11D7/08 ,  C11D7/10 ,  C11D7/32 ,  C11D7/5022 ,  C11D11/0041

    摘要： In a composition for removing a polymeric contaminant that may remain on an apparatus for manufacturing a semiconductor device and a method of removing a polymeric contaminant using the composition, the composition includes from about 5 to 10 percent by weight of a fluoride salt, from about 5 to 15 percent by weight of an acid or a salt thereof, and from about 75 to 90 percent by weight of an aqueous solution of glycol. The composition can effectively remove the polymeric contaminant from the apparatus within a relatively short period of time, and suppress damages to parts of the apparatus.

    摘要翻译： 在用于除去可能保留在用于制造半导体器件的装置上的聚合物污染物的组合物中，以及使用该组合物除去聚合物污染物的方法，该组合物包括约5至10重量％的氟化物盐，约5至10重量％ 至15重量％的酸或其盐，和约75至90重量％的乙二醇水溶液。 组合物可以在相对短的时间内有效地从设备中除去聚合物污染物，并且抑制对装置的部件的损坏。