发明授权
- 专利标题: Microelectromechanical systems having trench isolated contacts, and methods for fabricating same
- 专利标题(中): 具有沟槽隔离触点的微机电系统及其制造方法
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申请号: US11078253申请日: 2005-03-11
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公开(公告)号: US07352040B2公开(公告)日: 2008-04-01
- 发明人: Aaron Partridge , Markus Lutz , Silvia Kronmueller
- 申请人: Aaron Partridge , Markus Lutz , Silvia Kronmueller
- 申请人地址: DE Stuttgart
- 专利权人: Robert Bosch GmbH
- 当前专利权人: Robert Bosch GmbH
- 当前专利权人地址: DE Stuttgart
- 代理机构: Kenyon & Kenyon LLP
- 主分类号: H01L29/84
- IPC分类号: H01L29/84
摘要:
There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging and a contact area disposed at least partially outside the chamber. The contact area is electrically isolated from nearby electrically conducting regions by way of dielectric isolation trench that is disposed around the contact area. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.