-
1.发明授权Microelectromechanical device including an encapsulation layer of which a portion is removed to expose a substantially planar surface having a portion that is disposed outside and above a chamber and including a field region on which integrated circuits are formed, and methods for fabricating same 有权微电子机械装置包括一个封装层，一个部分被去除以暴露一个基本平坦的表面，该表面具有一个设置在室外的部分，并且包括形成有集成电路的场区域，以及用于制造集成电路的方法公开(公告)号：US08421167B2
公开(公告)日：2013-04-16
申请号：US12952895
申请日：2010-11-23
Applicant: Aaron Partridge , Markus Lutz , Silvia Kronmueller
Inventor： Aaron Partridge , Markus Lutz , Silvia Kronmueller
IPC: H01L21/00
CPC classification number: B81C1/00261 , B81B2207/015 , B81C1/00333 , B81C2201/0176 , B81C2203/0136 , H01L2924/0002 , H01L2924/00
Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.
Abstract translation: 这里描述和说明了许多发明。 在一个方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。
-
2.发明授权公开(公告)号：US07851248B2
公开(公告)日：2010-12-14
申请号：US12305150
申请日：2007-08-21
Applicant: Silvia Kronmueller , Tino Fuchs , Ando Feyh , Christina Leinenbach , Marco Lammer
Inventor： Silvia Kronmueller , Tino Fuchs , Ando Feyh , Christina Leinenbach , Marco Lammer
IPC: H01L21/00
CPC classification number: B81C1/00333 , B81C2201/0115 , B81C2201/0132 , B81C2203/0136 , B81C2203/0145
Abstract: A capping technology is provided in which, despite the fact that structures which are surrounded by a silicon-germanium filling layer are exposed using ClF3 etching through micropores in the silicon cap, an etching attack on the silicon cap is prevented, namely, either by particularly selective (approximately 10,000:1 or higher) adjustment of the etching process itself, or by using the finding that the oxide of a germanium-rich layer, in contrast to oxidized porous silicon, is not stable but instead may be easily dissolved, to protect the silicon cap.
Abstract translation: 提供了一种封盖技术，尽管事实上，利用ClF3蚀刻通过硅盖中的微孔暴露由硅 - 锗填充层包围的结构，但是防止了对硅帽的蚀刻攻击，即特别地 选择性（大约10,000:1或更高）调整蚀刻工艺本身，或通过使用与氧化多孔硅相反的富锗层的氧化物不稳定但可以容易地溶解的发现来保护 硅帽。
-
3.发明申请CRACK AND RESIDUE FREE CONFORMAL DEPOSITED SILICON OXIDE WITH PREDICTABLE AND UNIFORM ETCHING CHARACTERISTICS 有权裂纹和残留物具有可预测和均匀蚀刻特性的无定形沉积硅氧化物公开(公告)号：US20100159627A1
公开(公告)日：2010-06-24
申请号：US12578739
申请日：2009-10-14
Applicant: Aaron Partridge , Markus Lutz , Silvia Kronmueller
Inventor： Aaron Partridge , Markus Lutz , Silvia Kronmueller
IPC: H01L21/56
CPC classification number: H01L21/02164 , C23C16/045 , C23C16/402 , C23C16/56 , H01L21/0228 , H01L21/02337 , H01L21/31612
Abstract: A silicon oxide layer is formed by oxidation or decomposition of a silicon precursor gas in an oxygen-rich environment followed by annealing. The silicon oxide layer may be formed with slightly compressive stress to yield, following annealing, an oxide layer having very low stress. The silicon oxide layer thus formed is readily etched without resulting residue using HF-vapor.
Abstract translation: 通过在富氧环境中氧化或分解硅前体气体然后进行退火而形成氧化硅层。 氧化硅层可以形成为稍微的压缩应力，以在退火之后产生具有非常低的应力的氧化物层。 由此形成的氧化硅层容易地被蚀刻，而不会使用HF-蒸气而产生残余物。
-
4.发明申请公开(公告)号：US20090309175A1
公开(公告)日：2009-12-17
申请号：US12403468
申请日：2009-03-13
Applicant: Aaron Partridge , Markus Lutz , Silvia Kronmueller
Inventor： Aaron Partridge , Markus Lutz , Silvia Kronmueller
IPC: H01L23/28
CPC classification number: B81C1/00293 , B81C2203/0136
Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of fabricating or manufacturing MEMS having mechanical structures that operate in controlled or predetermined mechanical damping environments. In this regard, the present invention encapsulates the mechanical structures within a chamber, prior to final packaging and/or completion of the MEMS. The environment within the chamber containing and/or housing the mechanical structures provides the predetermined, desired and/or selected mechanical damping. The parameters of the encapsulated fluid (for example, the gas pressure) in which the mechanical structures are to operate are controlled, selected and/or designed to provide a desired and/or predetermined operating environment.
Abstract translation: 这里描述和说明了许多发明。 一方面，本发明涉及一种制造或制造具有在受控或预定的机械阻尼环境中操作的机械结构的MEMS的技术。 在这方面，本发明在MEMS的最终包装和/或完成之前将机械结构封装在腔室内。 包含和/或容纳机械结构的腔室内的环境提供预定的，期望的和/或选择的机械阻尼。 控制，选择和/或设计机械结构要操作的封装流体的参数（例如，气体压力）以提供期望的和/或预定的操作环境。
-
5.发明申请公开(公告)号：US20090236610A1
公开(公告)日：2009-09-24
申请号：US12282842
申请日：2007-03-09
Applicant: Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
Inventor： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
CPC classification number: H01L21/228 , H01L21/02378 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/02667 , H01L21/223 , H01L21/225 , H01L21/324
Abstract: A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.
Abstract translation: 提供了一种制造半导体结构的方法，其包括以下操作：提供晶体半导体衬底，提供与半导体衬底的表面相邻的多孔区域，从表面引入掺杂剂到多孔区域中，并将多孔 区域形成半导体衬底的掺杂类型和/或掺杂浓度和/或掺杂分布/不同于半导体衬底或/或掺杂分布的晶体掺杂区域。 同样提供相应的半导体结构。
-
Patent Agency Ranking
6.发明申请公开(公告)号：US20080237756A1
公开(公告)日：2008-10-02
申请号：US11901826
申请日：2007-09-18
Applicant: Aaron Partridge , Markus Lutz , Silvia Kronmueller
Inventor： Aaron Partridge , Markus Lutz , Silvia Kronmueller
CPC classification number: B81C1/00261 , B81B2207/015 , B81C1/00333 , B81C2201/0176 , B81C2203/0136 , H01L2924/0002 , H01L2924/00
Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.
Abstract translation: 这里描述和说明了许多发明。 在一个方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。
-
7.发明申请公开(公告)号：US20060108652A1
公开(公告)日：2006-05-25
申请号：US11323920
申请日：2005-12-30
Applicant: Aaron Partridge , Markus Lutz , Silvia Kronmueller
Inventor： Aaron Partridge , Markus Lutz , Silvia Kronmueller
CPC classification number: B81C1/00261 , B81B2207/015 , B81C1/00333 , B81C2201/0176 , B81C2203/0136 , H01L2924/0002 , H01L2924/00
Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.
Abstract translation: 这里描述和说明了许多发明。 在一个方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。
-
公开(公告)号：US20060054972A1
公开(公告)日：2006-03-16
申请号：US10518065
申请日：2002-12-11
Applicant: Silvia Kronmueller , Ulf Wilhelm
Inventor： Silvia Kronmueller , Ulf Wilhelm
IPC: H01L27/12
CPC classification number: B81C1/00095 , B81B2203/0307 , B81B2203/033 , B81C2201/0109 , G01P15/0802 , G01P15/125 , G01P2015/0814
Abstract: A method and device are for anchoring fixed structural elements and, e.g., for anchoring electrodes for components, e.g., SOI wafer components, whose component structure is formed in a silicon layer on top of a substrate used as support. The fixed element may be mechanically connected to the substrate via at least one anchoring element made of an anchoring material and extending through the silicon layer. In the case of an SOI wafer, the anchoring element may extend through the silicon layer and the sacrificial layer of the SOI wafer. To this end, in the area of the surface of the fixed element, at least one recess is made in the silicon layer, which may extend through the entire silicon layer and the sacrificial layer down to the substrate. The recess may then be filled with an anchoring material, so that the fixed element is mechanically connected to the substrate via the anchoring element that is thereby created.
Abstract translation: 一种方法和装置用于锚固固定的结构元件，并且例如用于锚定用于部件的电极，例如SOI晶片部件，其SOI部件结构形成在用作支撑件的基板的顶部上的硅层中。 固定元件可以经由至少一个由锚固材料制成并延伸穿过硅层的锚固元件机械连接到基板。 在SOI晶片的情况下，锚定元件可以延伸穿过SOI晶片的硅层和牺牲层。 为此，在固定元件表面的区域中，在硅层中形成至少一个凹槽，硅层可延伸穿过整个硅层和牺牲层向下延伸至衬底。 然后可以用锚固材料填充凹部，使得固定元件通过由此产生的锚固元件机械地连接到基板。
-
9.发明授权Microelectromechanical device including an encapsulation layer of which a portion is removed to expose a substantially planar surface having a portion that is disposed outside and above a chamber and including a field region on which integrated circuits are formed, and methods for fabricating same 有权微电子机械装置包括一个封装层，一个部分被去除以暴露一个基本平坦的表面，该表面具有一个设置在室外的部分，并且包括形成有集成电路的场区域，以及用于制造集成电路的方法公开(公告)号：US08623686B2
公开(公告)日：2014-01-07
申请号：US13829393
申请日：2013-03-14
Applicant: Aaron Partridge , Markus Lutz , Silvia Kronmueller
Inventor： Aaron Partridge , Markus Lutz , Silvia Kronmueller
IPC: H01L21/00
CPC classification number: B81C1/00261 , B81B2207/015 , B81C1/00333 , B81C2201/0176 , B81C2203/0136 , H01L2924/0002 , H01L2924/00
Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.
Abstract translation: 这里描述和说明了许多发明。 在一个方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。
-
10.发明申请MICROELECTROMECHANICAL DEVICE INCLUDING AN ENCAPSULATION LAYER OF WHICH A PORTION IS REMOVED TO EXPOSE A SUBSTANTIALLY PLANAR SURFACE HAVING A PORTION THAT IS DISPOSED OUTSIDE AND ABOVE A CHAMBER AND INCLUDING A FIELD REGION ON WHICH INTEGRATED CIRCUITS ARE FORMED, AND METHODS FOR FABRICATING SAME 有权微电子装置，其中包括一部分的封装层，其中所述掩蔽层被移除以暴露出具有外部并在室外排出的部分的主要平面表面，并且包括形成集成电路的场区域及其制造方法公开(公告)号：US20130280842A1
公开(公告)日：2013-10-24
申请号：US13829393
申请日：2013-03-14
Applicant: Aaron PARTRIDGE , Markus LUTZ , Silvia Kronmueller
Inventor： Aaron PARTRIDGE , Markus LUTZ , Silvia Kronmueller
IPC: B81C1/00
CPC classification number: B81C1/00261 , B81B2207/015 , B81C1/00333 , B81C2201/0176 , B81C2203/0136 , H01L2924/0002 , H01L2924/00
Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.
Abstract translation: 这里描述和说明了许多发明。 在一个方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。
-
-
-
-
-
-
-
-
-
Search Results
51
records
(took 0.02 seconds)
