发明授权
US07352942B2 Optical field concentrator using multiple low-index nano-layer configuration for CMOS compatible laser devices
有权
使用CMOS兼容激光器件的多个低折射率纳米层配置的光场集中器
- 专利标题： Optical field concentrator using multiple low-index nano-layer configuration for CMOS compatible laser devices
- 专利标题（中）： 使用CMOS兼容激光器件的多个低折射率纳米层配置的光场集中器
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申请号： US11410228申请日： 2006-04-24
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公开(公告)号： US07352942B2公开(公告)日： 2008-04-01
- 发明人: Ning-Ning Feng , Jurgen Michel , Lionel C. Kimerling
- 申请人： Ning-Ning Feng , Jurgen Michel , Lionel C. Kimerling
- 申请人地址： US MA Cambridge
- 专利权人： Massachusetts Institute of Technology
- 当前专利权人： Massachusetts Institute of Technology
- 当前专利权人地址： US MA Cambridge
- 代理机构： Gauthier & Connors LLP
- 主分类号： G02B6/10
- IPC分类号： G02B6/10 ; H01L21/00
摘要：
An optical field concentrator includes a plurality of waveguide layers comprising high index materials having a first defined thickness. At least one nano-layer structure is positioned between said waveguide layers. The at least one nano-layer structure comprises low index materials having a second defined thickness that is smaller than the first defined thickness. A plurality of cladding layers are positioned between the waveguide layers and the at least one nano-layer structure. The cladding layers have a third defined thickness that is larger than the first defined thickness.
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