利索-全球专利检索

  1. 登录
  2. 注册
发明授权
US07354829B2 Trench-gate transistor with ono gate dielectric and fabrication process therefor 有权
具有栅极电介质的沟槽栅晶体管及其制造工艺

Trench-gate transistor with ono gate dielectric and fabrication process therefor
摘要：
A trench-gate type transistor has a gate insulating film formed on an inner wall of a trench. The gate insulating film includes a first portion located on a wall of the trench and a second portion located on upper and bottom portions of the trench. The first portion includes a first oxide film, a nitride film, and a second oxide film. The second portion includes only an oxide film and is thicker than the first portion. Accordingly, electric field concentration on upper and lower corner portions of the trench can be reduced to improve the withstand voltage. In addition, and end of the trench may have an insulation layer that is thicker than the first portion.
摘要（中）：

沟槽栅型晶体管具有形成在沟槽的内壁上的栅极绝缘膜。 栅极绝缘膜包括位于沟槽的壁上的第一部分和位于沟槽的上部和底部的第二部分。 第一部分包括第一氧化膜，氮化物膜和第二氧化物膜。 第二部分仅包括氧化膜并且比第一部分厚。 因此，可以减小沟槽的上下角部的电场集中以提高耐压。 此外，沟槽的端部可以具有比第一部分更厚的绝缘层。

公开/授权文献
信息查询
Espacenet
0/0