Invention Grant
US07354871B2 Nanowires comprising metal nanodots and method for producing the same
失效
包含金属纳米点的纳米线及其制造方法
- Patent Title: Nanowires comprising metal nanodots and method for producing the same
- Patent Title (中): 包含金属纳米点的纳米线及其制造方法
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Application No.: US11506091Application Date: 2006-08-17
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Publication No.: US07354871B2Publication Date: 2008-04-08
- Inventor: Eun Kyung Lee , Byoung Lyong Choi
- Applicant: Eun Kyung Lee , Byoung Lyong Choi
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2005-0106040 20051107; KR10-2006-0004919 20060117
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469

Abstract:
Nanowires methods for producing the nanowires are provided. The nanowires include a plurality of metal nanodots uniformly disposed therein, and a core portion, wherein each of the plurality of metal nanodots is coupled to the core portion. According to the method, metal nanodots can be uniformly disposed in the nanowires, and nanowires having various physical properties can be produced by controlling the size and interval of the nanodots. Therefore, the nanowires can be effectively used in a variety of applications, including electronic devices, such as field effect transistors (FETs), sensors, photodetectors, light emitting diodes (LEDs), and laser diodes (LDs).
Public/Granted literature
- US20070111493A1 Nanowires comprising metal nanodots and method for producing the same Public/Granted day:2007-05-17
Information query
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