A semiconductor device, including a memory cell having a control gate, a source and drain; and a current limiting circuit coupled to the source. The current limiting circuit may be configured to limit a current between the drain and source to not exceed a predetermined value; the current being generated in response to application of first and second voltages to the control gate and drain, respectively. The current limiting circuit may include a transistor comprising a first terminal, a second terminal, and a third terminal, wherein the first terminal may include a source of the transistor, the third terminal may include a drain of the transistor, and the second terminal may include a gate of the transistor, and wherein a stable bias may be applied to the second terminal of the transistor.