Invention Grant
- Patent Title: Process for manufacturing a microsystem
- Patent Title (中): 微系统制造工艺
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Application No.: US10949800Application Date: 2004-09-24
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Publication No.: US07356913B2Publication Date: 2008-04-15
- Inventor: Yves Fouillet
- Applicant: Yves Fouillet
- Applicant Address: FR Paris
- Assignee: Commissariat A l'Energie Atomique
- Current Assignee: Commissariat A l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Thelen Reid Brown Raysman & Steiner LLP
- Priority: FR9715931 19971216
- Main IPC: H01H11/00
- IPC: H01H11/00 ; H01H65/00

Abstract:
A process for making microswitches or microvalves, composed of a substrate and used for shifting between a first state of functioning and a second state of functioning by means of a bimetal-effect thermal sensor. The sensor includes a deformable element attached, at opposite ends, to the substrate so that there is a natural deflection without stress with respect to a surface of the substrate opposite it, this natural deflection determining the first state of functioning, the second state of functioning being caused by the thermal sensor which, under the influence of temperature variation, induces a deformation of the deformable element which diminishes the deflection by subjecting it to a compressive force which shifts it in a direction opposite to its natural deflection by buckling.
Public/Granted literature
- US20050046541A1 Microsystem with an element which can be deformed by a thermal sensor Public/Granted day:2005-03-03
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