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US07357138B2 Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials 失效
蚀刻高介电常数材料和清洁高介电常数材料沉积室的方法

Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
摘要：
A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.
摘要（中）：

本文公开了用于从用于蚀刻和/或清洁应用的基底中去除物质的方法。 在一个实施方案中，提供了一种通过使该物质与包含至少一种成员的物质与含卤素的化合物，硼的物质反应从物质中除去介电常数大于二氧化硅的物质的方法 含氢化合物，含氮化合物，螯合化合物，含碳化合物，氯硅烷，氢氯代硅烷或有机氯硅烷，以形成挥发性产物，并从基质中除去挥发性产物，从而除去 来自底物的物质。

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