Invention Grant
- Patent Title: Relaxed silicon germanium substrate with low defect density
- Patent Title (中): 具有低缺陷密度的松弛硅锗衬底
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Application No.: US11074738Application Date: 2005-03-08
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Publication No.: US07357838B2Publication Date: 2008-04-15
- Inventor: Chun Chieh Lin , Yee-Chia Yeo , Chien-Chao Huang , Chao-Hsiung Wang , Tien-Chih Chang , Chenming Hu , Fu-Liang Yang , Shih-Chang Chen , Mong-Song Liang , Liang-Gi Yao
- Applicant: Chun Chieh Lin , Yee-Chia Yeo , Chien-Chao Huang , Chao-Hsiung Wang , Tien-Chih Chang , Chenming Hu , Fu-Liang Yang , Shih-Chang Chen , Mong-Song Liang , Liang-Gi Yao
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes Boone, LLP
- Main IPC: C30B23/00
- IPC: C30B23/00
Abstract:
A method of forming a strained silicon layer on a relaxed, low defect density semiconductor alloy layer such as SiGe is provided.
Public/Granted literature
- US20050158971A1 Relaxed silicon germanium substrate with low defect density Public/Granted day:2005-07-21
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