发明授权
- 专利标题: Sequential deposition process for forming Si-containing films
- 专利标题(中): 用于形成含Si膜的顺序沉积工艺
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申请号: US11206199申请日: 2005-08-18
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公开(公告)号: US07358194B2公开(公告)日: 2008-04-15
- 发明人: Anthony Dip , Allen John Leith , Seungho Oh
- 申请人: Anthony Dip , Allen John Leith , Seungho Oh
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/461
摘要:
A method is provided for forming a Si film in sequential deposition process. The method includes providing a substrate in a process chamber, forming a chlorinated Si film by exposing the substrate to a chlorinated silane gas, and dry etching the chlorinated Si film to reduce the chlorine content of the Si film. The Si film may be deposited selectively or non-selectively on the substrate and the deposition may be self-limiting or non-self-limiting. Other embodiments provide a method for forming SiGe films in a sequential deposition process.