Invention Grant
- Patent Title: Flash memory device
- Patent Title (中): 闪存设备
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Application No.: US11275273Application Date: 2005-12-21
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Publication No.: US07358558B2Publication Date: 2008-04-15
- Inventor: Keun Woo Lee
- Applicant: Keun Woo Lee
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2005-0057841 20050630
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/336
Abstract:
A floating gate of a flash memory device is formed in a moat formed in an isolation film. Therefore, an electric field applied between a control gate and a channel region upon cycling can be precluded or mitigated. A distance between the control gate and the channel region is set greater than a predetermined value. Therefore, an electric field applied between the control gate and the channel region upon cycling can be mitigated. As a result, a data retention characteristic and an endurance characteristic can be improved.
Public/Granted literature
- US20070001211A1 Flash Memory Device Public/Granted day:2007-01-04
Information query
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