Invention Grant
- Patent Title: Sacrificial layer technique to make gaps in MEMS applications
- Patent Title (中): 牺牲层技术在MEMS应用中产生空白
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Application No.: US11241024Application Date: 2005-09-30
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Publication No.: US07358580B2Publication Date: 2008-04-15
- Inventor: Qing Ma , Peng Cheng
- Applicant: Qing Ma , Peng Cheng
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L29/82 ; H01L29/84 ; B81B3/00

Abstract:
A method comprising over an area of a substrate, forming a plurality of three dimensional first structures; following forming the first structures, conformally introducing a sacrificial material over the area of the substrate; introducing a second structural material over the sacrificial material; and removing the sacrificial material. An apparatus comprising a first structure on a substrate; and a second structure on the substrate and separated from the first structure by an unfilled gap defined by the thickness of a removed film.
Public/Granted literature
- US20060027891A1 Sacrificial layer technique to make gaps in MEMS applications Public/Granted day:2006-02-09
Information query
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