Invention Grant
- Patent Title: Method of manufacturing a dielectric layer in a memory device that includes nitriding step
- Patent Title (中): 在包括氮化步骤的存储器件中制造介电层的方法
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Application No.: US11033156Application Date: 2005-01-12
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Publication No.: US07361560B2Publication Date: 2008-04-22
- Inventor: Jai-Dong Lee , Ki-Chul Kim , In-Wook Cho
- Applicant: Jai-Dong Lee , Ki-Chul Kim , In-Wook Cho
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2004-0002136 20040113
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method for manufacturing a dielectric layer structure for a non-volatile memory cell is provided. A method includes forming a first dielectric layer for tunneling on a semiconductor substrate, a second dielectric layer on the first dielectric layer to store charges, nitrogenizing surface of the second dielectric layer, and forming a third dielectric layer the nitridedsecond dielectric layer.
Public/Granted literature
- US20050153514A1 Method of manufacturing dielectric layer in non-volatile memory cell Public/Granted day:2005-07-14
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