发明授权
- 专利标题: Methods of fabricating a semiconductor device using a selective epitaxial growth technique
- 专利标题(中): 使用选择性外延生长技术制造半导体器件的方法
-
申请号: US11299447申请日: 2005-12-09
-
公开(公告)号: US07361563B2公开(公告)日: 2008-04-22
- 发明人: Dong-Suk Shin , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee , Seung-Hwan Lee
- 申请人: Dong-Suk Shin , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee , Seung-Hwan Lee
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Mills & Onello LLP
- 优先权: KR10-2004-0045157 20040617; KR10-2005-0010272 20050203
- 主分类号: H01L21/205
- IPC分类号: H01L21/205 ; H01L29/80 ; H01L21/336
摘要:
Methods of fabricating a semiconductor device using a selective epitaxial growth technique include forming a recess in a semiconductor substrate. The substrate having the recess is loaded into a reaction chamber. A semiconductor source gas and a main etching gas are injected into the reaction chamber to selectively grow an epitaxial semiconductor layer on a sidewall and on a bottom surface of the recess. A selective etching gas is injected into the reaction chamber to selectively etch a fence of the epitaxial semiconductor layer which is adjacent to the sidewall of the recess and grown to a level that is higher than an upper surface of the semiconductor substrate.